sangdest microelectronics technical data green products data sheet n1388, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MBRH6045PT MBRH6045PT schottky rectifier applications: switching power supply converters free-wheeling diodes reverse battery protection center tap configuration features: 150 c t j operation center tap to- 3p package low forward voltage drop high purity, high temperature epoxy encapsulation f or enhanced mechanical strength and moisture resistance high frequency operation guard ring for enhanced ruggedness and long term re liability this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in mm to-3p common cathode base 2 anode 1 anode 2 3 1
sangdest microelectronics technical data green products data sheet n1388, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MBRH6045PT marking diagram: where xxxxx is yywwl mbrh = device type 60 = forward current (60a) 45 = reverse voltage (45v) pt = configuration ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MBRH6045PT to-3p(pb-free) 30pcs/ tube for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max units peak reverse voltage v rwm - 45 v 30(per leg) max. average forward current i f(av) 50% duty cycle @tc =105 rectangular wave form 60(per leg) a max. peak one cycle non- repetitive surge current (per leg) i fsm 8.3 ms, half sine pulse 430 a
sangdest microelectronics technical data green products data sheet n1388, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MBRH6045PT electrical characteristics: characteristics symbol condition max. units v f1 @ 30a, pulse, t j = 25 0.70 v max. forward voltage drop (per leg) * v f2 @ 30a, pulse, t j = 125 0.65 v i r1 @v r = rated v r , t j = 25 1.0 ma max. reverse current (per leg) * i r2 @v r = rated v r , t j = 125 50 ma typical series inductance (per leg) l s measured lead to lead 5 mm from package body 7.5 nh max. voltage rate of change dv/dt - 10,000 v/ m s *pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units junction temperature range t j - -55 to +150 storage temperature range t stg - -55 to +150 maximum thermal resistance junction to case r q jc dc operation 1.6 /w approximate weight wt - 6.0 g case style to-3p
sangdest microelectronics technical data green products data sheet n1388, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MBRH6045PT disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
|
