, li ne. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 ? im-chanime l irff11 o irff1t i irfft1 3 10 0 volt , 0.6 0 oh m hexfet ? th e hexfe t transistor s als o featur e al l o f th e wel l establishe d advantage s o f mosfet s suc h a s voltag e control , freedo m fro m secon d breakdown , ver y fas t switching , eas e o f paralleling , an d temperatur e sta - bilit y o f th e electrica l parameters . the y ar e wel l suite d fo r application s suc h a s switchin g dowe r supplies , moto r controls , inverters , choppers , audi o amplifiers , an d hig h energ y puls e circuits . features : ? fas t switchin g ? lo w driv e curren t ? eas e o f parallelin g ? n o secon d breakdow n a excellen t temperatur e stabilit y produc t summar y par t numbe r irff11 0 irff11 1 irff11 2 irff11 3 vd s 100 v 60 v 100 v 60 v r ds(on ) o.e n 0.6s 7 o.s n o.s n i d 3.5 a 3.5 a 3.0 a 3.0 a cas e styl e an d dimension s 06 6 1 0 034 1 11210026 1 4.5 7 (0.180 ) max . 0.4sic018 i m e 1 0 oi4 > ! 1 4 2 2 '056 . 1 2 70(050 ) ? dia * ? 2510325 ) ?-dla-? h 1 45 7 (0.180 1 4 06( 0 160 ] 1 13.0 3 d . 7 1 1 ref . d m 1 0 02i i / 0.4 1 10.016 ] " ' 3 place s conform s t o jede c outlin e to-20sa f ito-39 ) dimension s i n millimeter s an d (inches ) n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n. i semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . \ semi-conductor s entourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . ^>?% ; /"^ . j . i downloaded from: http:///
irff110 , irff111 , irff112 , irff11 3 device s i n diod e rating s an d characteristic s i g continuou s sourc e curren t (bod v diode ) ( s m puls e sourc e curren t (bod y diode } q ) vs q diod e forwar d voltag e (2 ) t r r revers e recover y tim e qr r revers e recovere d charg e t o n forwar d turn-o n tim e irff11 0 irff1 1 1 irff11 2 irff11 3 irff11 0 irff11 1 irff11 2 irff11 3 irff11 0 irff11 1 irff11 2 irff11 3 al l al l al l - -- -- - - -- - - -- 20 0 1. 0 3. 5 3. 0 1 4 1 2 2. 5 2. 0 a a a a vv n s j. c modifie d mosfe t symbo l showin g th e integral revers e p- n junctio n rectifier . t c ? 25c . l s ? 3.5a , v q s - 0 v t c -25c.i s =3.0a,v g s = o v t j = 150c . i p = 3.5a,dlp/d t = 100a/,j s t j = 150c . i p = 3.5a,dl f /d t = 100a/n s intrinsi c turn-o n tim e i s negligible . turn-o n spee d i s substantiall y controlle d b y l g -t - lq . ?t j = 25cto150c . ? puls e test : puls e width * 300^s , dut y cycl e < 2% . ' repetitiv e rating : puls e widt h limite d b y max . junctio n temperature . se e transient therma l impedanc e curv e (fig . 5) . downloaded from: http:///
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