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hexfet ? power mosfet d s g to - 220pak g d s gate drain source application ? optimized for ups/inverter applications ? low voltage power tools benefits ? best in class performance for ups/inverter applications ? very low rds(on) at 4.5v vgs ? ultra - low gate impedance ? fully characterized avalanche voltage and current ? lead - free, rohs compliant base part number package type standard pack orderable part number form quantity IRLB8314PBF to - 220pak tube 50 IRLB8314PBF s d g absolute maximium rating symbol parameter max. units v gs gate - to - source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 171 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 120 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 130 i dm pulsed drain current ? 664 p d @t c = 25c maximum power dissipation 125 w p d @t c = 100c maximum power dissipation 63 w linear derating factor 0.83 w/c t j t stg operating junction and storage temperature range - 55 to + 175 c soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6 - 32 or m3 screw 10 lbfin (1.1 nm) thermal resistance symbol parameter typ. max. units r ? jc junction - to - case ? CCC 1.2 c/w r ? cs case - to - sink, flat greased surface 0.50 CCC r ? ja junction - to - ambient CCC 62 notes ? through ? are on page 8 v dss 30 v r ds(on) max (@ v gs = 10v) 2.4 m ? (@ v gs = 4.5v) 3.2 qg (typical) 40 nc i d (silicon limited) 171 ? a i d (package limited) 130a IRLB8314PBF 1 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 downloaded from: http:///
IRLB8314PBF 2 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions bv dss drain - to - source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient CCC 14 CCC mv/c reference to 25c, i d = 1ma ? r ds(on) static drain - to - source on - resistance CCC 1.9 2.4 m ? v gs = 10v, i d = 68a ? CCC 2.6 3.2 v gs = 4.5v, i d = 68a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 100a ? v gs(th) / ? t j gate threshold voltage coefficient CCC - 7.0 CCC mv/c i dss drain - to - source leakage current CCC CCC 1.0 a v ds =24 v, v gs = 0v CCC CCC 150 v ds =24v,v gs = 0v,t j =125c i gss gate - to - source forward leakage CCC CCC 100 na v gs = 20v gate - to - source reverse leakage CCC CCC - 100 v gs = - 20v gfs forward transconductance 307 CCC CCC s v ds = 15v, i d =68a q g total gate charge CCC 40 60 q gs1 pre - vth gate - to - source charge CCC 6.8 CCC v ds = 15v q gs2 post - vth gate - to - source charge CCC 13 CCC nc v gs = 4.5v q gd gate - to - drain charge CCC 8.7 CCC i d = 68a q godr gate charge overdrive CCC 11.5 CCC q sw switch charge (qgs2 + qgd) 21.7 r g gate resistance CCC 1.7 CCC ? t d(on) turn - on delay time CCC 19 CCC v dd = 15v t r rise time CCC 142 CCC ns i d = 68a t d(off) turn - off delay time CCC 32 CCC r g = 1.8 ? t f fall time CCC 72 CCC v gs = 4.5v ? c iss input capacitance CCC 5050 CCC v gs = 0v c oss output capacitance CCC 890 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 500 CCC ? = 1.0mhz avalanche characteristics e as (thermally limited) single pulse avalanche energy ? mj e as (tested) single pulse avalanche energy tested value ? i ar avalanche current ? a e ar repetitive avalanche energy ? mj . diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 171 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current CCC CCC 664 integral reverse (body diode) ? p - n junction diode. v sd diode forward voltage CCC CCC 1.0 v t j = 25c,i s = 68a,v gs = 0v ? t rr reverse recovery time CCC 21 31 ns t j = 25c i f = 68a ,v dd =15v q rr reverse recovery charge CCC 54 81 nc di/dt = 430a/s ? downloaded from: http:/// IRLB8314PBF 3 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 1. typical output characteristics fig 4. normalized on - resistance vs. temperature fig 5. typical capacitance vs. drain - to - source voltage fig 6. typical gate charge vs. gate - to - source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 25c 2.8v vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 175c 2.8v vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.8v 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) v ds = 15v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r ds(on) , drain-to-source on resistance (normalized) i d = 120a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c, capacitance (pf) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds short ed c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 24v v ds = 15v i d = 68a downloaded from: http:/// IRLB8314PBF 4 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 8. maximum safe operating area fig 10. threshold voltage vs. temperature fig 7. typical source - drain diode forward voltage fig 9. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i sd , reverse drain current (a) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 i d , drain current (a) limited by package -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v gs (th) gate threshold voltage (v) i d = 100a i d = 250a i d = 1.0ma fig 11. maximum effective transient thermal impedance, junction - to - case 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 thermal response ( z thjc ) c/w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on) downloaded from: http:/// IRLB8314PBF 5 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 12. typical on - resistance vs. gate voltage fig 14. maximum avalanche energy vs. drain current 2 6 10 14 18 v gs , gate-to-source voltage (v) 0 2 4 6 8 10 r ds (on), drain-to -source on resistance ( m ? ) t j = 25c t j = 125c i d = 86a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 e as, single pulse avalanche energy (mj) i d t op 14a 30a bott om 68a downloaded from: http:/// IRLB8314PBF 6 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 18. peak diode recovery dv/dt test circuit for n - channel hexfet ? power mosfets fig 19a. unclamped inductive test circuit r g i a s 0 .0 1 ? t p d .u .t l v d s + - v d d d r iv e r a 1 5 v 2 0 v fig 20a. switching time test circuit fig 21a. gate charge test circuit t p v (b r ) d s s i a s fig 19b. unclamped inductive waveforms fig 20b. switching time waveforms v ds v gs id v gs(th) q gs1 q gs2 q gd q godr fig 21b. gate charge waveform downloaded from: http:/// IRLB8314PBF 7 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 to - 220ab package outline (dimensions are shown in millimeters (inches)) to - 220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ i n t e r n a t i o n a l p a r t n u m b e r r e c t i f i e r l o t c o d e a s s e m b l y l o g o y e a r 0 = 2 0 0 0 d a t e c o d e w e e k 1 9 l i n e c l o t c o d e 1 7 8 9 e x a m p l e : t h i s i s a n i r f 1 0 1 0 n o t e : " p " i n a s s e m b l y l i n e p o s i t i o n i n d i c a t e s " l e a d - f r e e " i n t h e a s s e m b l y l i n e " c " a s s e m b l e d o n w w 1 9 , 2 0 0 0 to - 220ab packages are not recommended for surface mount application. downloaded from: http:/// IRLB8314PBF 8 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to - 220 n/a rohs compliant yes ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability/ ?? applicable version of jedec standard at the time of product release. ir world headquarters: 101n sepulveda blvd, el segundo, california 90245, usa to cotact iteraioal reciier, please isit htp://.irf.co/hoto - call/ notes: ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.067mh, r g = 50 ? , i as = 68a, v gs =10v. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j approximately 90c. ? this value determined from sample failure population, starting t j =25c, l=0.5mh, r g = 50 ? , i as =60a, v gs =10v. ? calculated continuous current based on maximum allowable junction temperature. bond wir e current limit is 130a. note that current limitations arising from heating of the device leads may occur with s ome lead mounting arrangements. (refer to an - 1140). downloaded from: http:/// |
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