2002. 1. 24 1/3 semiconductor technical data KRX204E revision no : 1 switching application. interface circuit and driver circuit application. features including two devices in tes6. (thin extreme super mini type with 6 pin.) with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. q common (emitter) 4. q common (emitter) 3. q out (collector) 5. q in (base) 6. q out (collector) 1 2 2. q in (base) 1 1 2 2 equivalent circuit q1 maximum rating (ta=25 1 ) r1 r2 common out q 1 1 in r1 r2 common out q 2 2 in q , q r1=2.2k ? r2=47k ? 1 q1 23 65 4 q2 equivalent circuit (top view) * total raing. characteristic symbol rating unit output voltage v o 50 v input voltage v i 12, -5 v output current i o 100 h characteristic symbol rating unit output voltage v o -50 v input voltage v i -12, 5 v output current i o -100 h characteristic symbol rating unit power dissipation p d * 200 m junction temperature t j 150 1 storage temperature range t stg -55 150 1 bd type name 123 4 6 5 q2 maximum rating (ta=25 1 ) q1, q2 maximum rating (ta=25 1 ) marking epitaxial planar npn/pnp transistor
2002. 1. 24 2/3 KRX204E revision no : 1 q1 electrical characteristics (ta=25 1 ) note : * characteristic of transistor only. characteristic symbol test condition min. typ. max. unit. output cut-off current i o(off) v o =50v, v i =0 - - 500 f dc current gain g i v o =5v, i o =10 h 80 200 - output voltage v o(on) i o =10 h , i i =0.5 h - 0.1 0.3 v input voltage (on) v i(on) v o =0.2v, i o =5 h - 0.8 1.1 v input voltage (off) v i(off) v o =5v, i o =0.1 h 0.5 0.65 - v transition frequency f t * v o =10v, i o =5 h - 200 - r input current i i v i =5v - - 3.6 h characteristic symbol test condition min. typ. max. unit. output cut-off current i o(off) v o =-50v, v i =0 - - -500 f dc current gain g i v o =-5v, i o =-10 h 80 200 - output voltage v o(on) i o =-10 h , i i =-0.5 h - -0.1 -0.3 v input voltage (on) v i(on) v o =-0.2v, i o =-20 h - -0.8 -1.1 v input voltage (off) v i(off) v o =-5v, i o =-0.1 h -0.5 -0.65 - v transition frequency f t * v o =-10v, i o =-5 h - 200 - r input current i i v i =-5v - - -3.6 h note : * characteristic of transistor only. q2 electrical characteristics (ta=25 1 )
2002. 1. 24 3/3 KRX204E revision no : 1 0.5 100 50 30 10 5 3 1 30 10 3 1 0.3 0.3 100 0.1 q v =0.2v o 1 q 1 ta=100 c ta=25 c ta=-25 c -0.1 -0.5 -0.3 -1 -10 -3 -5 -0.3 -100 -50 -30 -30 -1 -3 -10 -100 v =-0.2v o q 2 ta=100 c ta=25 c ta=-25 c o v =-5v -10k -5k -3k -1k -500 -300 -100 -50 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -30 0 q 2 t a =100 c ta = 2 5 c ta=-25 c v =5v output current i (ma) dc current gain g 30 10 1 300 500 100 50 i q o 1 30 10 3 o 100 g - i i o output current i (ma) dc current gain g i o g - i i o ta=100 c ta=25 c ta=-25 c -3 -1 10 30 50 300 v =-5v o -10 -30 -100 2 q 500 ta=100 c ta=25 c ta=-25 c 100 i(off) input off voltage v (v) o output current i ( a) i - v o i(off) i(on) input on voltage v (v) o output current i (ma) i - v o i(on) i(on) input on voltage v (v) o output current i (ma) i - v oi(on) i(off) input off voltage v (v) o output current i ( a) i - v o i(off) o v =5v 10k 5k 3k 1k 500 300 100 50 1.4 1.2 1.0 0.8 0.6 0.4 0.2 30 0 ta=100 c ta=25 c ta=-25 c
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