1 AM1321P analog power preliminary publication order number: ds-am1321_c these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0.079 @ v gs = -4.5v -1.7 0.110 @ v gs = -2.5v -1.5 product summary -20 p-channel 20-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sc70-3 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature d s g symbol maximum units v ds -20 v gs 8 t a =25 o c-1.7 t a =70 o c-1.4 i dm -2.5 i s 0.28 a t a =25 o c0.34 t a =70 o c0.22 t j , t stg -55 to 150 o c continuous source curren t (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherw ise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbo l max i mum uni t s t <= 5 sec 375 steady-state 430 thermal resistance ratings parame te r o c/w maximum junction-to-ambient a r thja
2 AM1321P analog power preliminary publication order number: ds-am1321_c notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. c. repetitive rating, pulse width lim ited by junction temperature. analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liabi lity arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. ?typical? parameters which may be provided in apl data sheets and/or spec ifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typical? must be validated for ea ch customer application by customer?s technical experts. apl does not conv ey any license under its patent ri ghts nor the rights of others. apl products are not designed, intended, or authorized for use as components in system s intended for surgical implant into the body, or othe r applications intended to support or sustain life, or fo r any other application in which the failur e of the apl product could create a situat ion where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buye r shall indemnify and hold apl and its officers, employees, subsid iaries, affiliates, and distributors harmless against all claims, cos ts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the pa rt. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = -250 ua -0.4 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d ( on ) v ds = -5 v, v gs = -4.5 v -5 a v gs = -4.5 v, i d = -1.7 a 79 v gs = -2.5 v, i d = -1.5 a 110 forward tranconductance a g fs v ds = -5 v, i d = -1.25 a 9 s diode forward voltage v sd i s = -0.46 a, v gs = 0 v -0.65 v total gate charge q g 7.2 gate-source charge q g s 1.7 gate-drain charge q gd 1.5 turn-on delay time t d(on) 10 rise time t r 9 turn-off delay time t d(off) 27 fall-time t f 11 r ds(on) m ? unit v dd = -10 v, i l = -1 a, v gen = -4.5 v, r g = 6 ? ns dynamic b v ds = -10 v, v gs = -4.5 v, i d = -1.7 a nc drain-source on-resistance a specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol parameter limits
3 AM1321P analog power preliminary publication order number: ds-am1321_c typical electrical characteristics figure 2. on-resistance variation with drain current and gate voltage figure 1. on-region characteristics figure 4. on-resistance variation with gate to source voltage figure 3. on-resistance variation with temperature figure 6. body diode forward voltage variation with source current and temperature figure 5. transfer characteristics
4 AM1321P analog power preliminary publication order number: ds-am1321_c typical electrical characteristics normalized thermal transien t junction to ambient figure 8. capacitance characteristic figure 7. gate charge characteristic figure 10. single pulse maximum power dissipation figure 9. maximum safe operating area
5 AM1321P analog power preliminary publication order number: ds-am1321_c package information
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