cystech electronics corp. spec. no. : c630t3 issued date : 2017.03.22 revised date : 2017.04.18 page no. : 1/6 BTD882NUT3 cystek product specification low vcesat npn epitaxial planar transistor BTD882NUT3 features ? low v ce (sat), 0.2v typ. at i c / i b = 2a / 0.2a ? excellent current gain characteristics ? complementary to btb772nut3 ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping BTD882NUT3-x-bl-x to-126 (pb-free lead plating package) 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton to-126 e c b bv ceo 30v i c 3a BTD882NUT3 b base c collector e emitter environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, bl: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c630t3 issued date : 2017.03.22 revised date : 2017.04.18 page no. : 2/6 BTD882NUT3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limit unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 9 v dc 3 a collector current pulse i c 7 *1 a ta=25 1 power dissipation tc=25 p d 10 w operating junction and storage temperature range tj ; tstg -55~+150 c ?? note : *1. single pulse pw 350 s,duty 2% . thermal performance parameter symbol limit unit thermal resistance, junction-to-ambient, max r ja 125 thermal resistance, junction-to-case, max r jc 12.5 c/w characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 40 - - v i c =50 a, i e =0 bv ceo 30 - - v i c =1ma, i b =0 bv ebo 9 - - v i e =50 a, i c =0 i cbo - - 100 na v cb =40v, i e =0 i ebo - - 100 na v eb =6v, i c =0 *v ce(sat) - 0.2 0.5 v i c =2a, i b =0.2a *v be(sat) - 1 1.5 v i c =2a, i b =0.2a *h fe 1 100 - - - v ce =2v, i c =20ma *h fe 2 160 - 320 - v ce =2v, i c =1a f t - 90 - mhz v ce =5v, i c =0.1a, f=100mhz cob - 17 - pf v cb =10v, f=1mhz *pulse test : pulse width 300 s, duty cycle 2% classification of h fe 2 rank p range 160~320
cystech electronics corp. spec. no. : c630t3 issued date : 2017.03.22 revised date : 2017.04.18 page no. : 3/6 BTD882NUT3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) ib=0 ib=1ma ib=500ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) ib=0 ib=2.5ma ib=5ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) ib=0 ib=2ma ib=4ma ib=6ma ib=10ma ib=20ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) ib=0 ib=5ma ib=10ma ib=50m a current gain vs collector current 10 100 1000 1 10 100 1000 10000 ic, collector current(ma) hfe, current gain ta=25 vce=5v vce=2v vce=1v current gain vs collector current 10 100 1000 1 10 100 1000 10000 ic, collector current(ma) hfe, current gain vce=2v 125c 75c 25c 0c -40c
cystech electronics corp. spec. no. : c630t3 issued date : 2017.03.22 revised date : 2017.04.18 page no. : 4/6 BTD882NUT3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 10000 ic, collector current(ma) vce(sat), saturation voltage(mv) vce(sat) @ ic=10ib 125c 75c 25c 0c -40c saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 ic, collector current(ma) vbe(sat), saturation voltage(mv) vbe(sat)@ic=10ib -40c 0c 25c 75c 125c saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 ic, collector current(ma) vbe(on), o n voltage(mv) vbe(on)@vce=2v -40c 0c 25c 75c 125c capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 vr, reverse-biased voltage(v) capacitance(pf) cob cib power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 ta, ambient temperature() pd, power dissipation(w) power derating curve 0 2 4 6 8 10 12 0 50 100 150 200 tc, casetemperature() pd, power dissipation(w)
cystech electronics corp. spec. no. : c630t3 issued date : 2017.03.22 revised date : 2017.04.18 page no. : 5/6 BTD882NUT3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c630t3 issued date : 2017.03.22 revised date : 2017.04.18 page no. : 6/6 BTD882NUT3 cystek product specification to-126 dimension *: typical millimeters inches millimeters inches style: pin 1.emitter 2.collector 3.base 3-lead to-126 plastic package cystek package code: t3 marking: d882 p date code dim min. max. min. max. dim min. max. min. max. a 2.500 2.900 0.098 0.114 e *2.290 *0.090 a1 1.100 1.500 0.043 0.059 e1 4.480 4.680 0.176 0.184 b 0.660 0.860 0.026 0.034 h 0.000 0.300 0.000 0.012 b1 1.170 1.370 0.046 0.054 l 15.300 15.700 0.602 0.618 c 0.450 0.600 0.018 0.024 l1 2.100 2.300 0.083 0.091 d 7.400 7.800 0.291 0.307 p 3.900 4.100 0.154 0.161 e 10.600 11.000 0.417 0.433 - 3.000 3.200 0.118 0.126 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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