dtc143t series npn 100ma 50v digital transistors (bias resistor bu ilt-in transistors) datasheet ll outline parameter value vmt3 emt3f v ceo 50v i c 100ma r 1 4.7k dtc143tm dtc143teb (sc-105aa) (sc-89) emt3 umt3f ll features 1) built-in biasing resistor 2) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) the bias resistors consist of thin-film resistor s with complete isolation to allow negative biasing of the input. they also have the advantage of completely eliminating parasitic effects. 4) only the on/off conditions need to be set for operation, making the circuit design easy. 5) complementary pnp types: dta143t series 6) complex transistors: emh3/ umh3n/ imh3a/ emg3/ umg3n/ fmg3a pnp type 7) lead free/rohs compliant. dtc143te dtc143tub sot-416(sc-75a) (sc-85) umt3 smt3 dtc143tua dtc143tka sot-323(sc-70) sot-346(sc-59) ll inner circuit b: base ll application c: collector switching circuit, inverter circuit, interface circ uit, e: emitter driver circuit ll packaging specifications part no. package package size taping code reel size (mm) tape width (mm) basic ordering unit.(pcs) marking dtc143tm vmt3 1212 t2l 180 8 8000 03 dtc143teb emt3f 1616 tl 180 8 3000 03 dtc143te emt3 1616 tl 180 8 3000 03 dtc143tub umt3f 2021 tl 180 8 3000 03 dtc143tua umt3 2021 t106 180 8 3000 03 dtc143tka smt3 2928 t146 180 8 3000 03 www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 1/9 20121023 - rev.001 downloaded from: http:///
dtc143t series d atasheet ll absolute maximum ratings (t a = 25c) parameter symbol values unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma power dissipation dtc143tm p d *1 150 mw dtc143teb 150 dtc143te 150 dtc143tub 200 dtc143tua 200 dtc143tka 200 junction temperature t j 150 range of storage temperature t stg -55 to +150 ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. collector-base breakdown voltage bv cbo i c = 50a 50 - - v collector-emitter breakdown voltage bv ceo i c = 1ma 50 - - v emitter-base breakdown voltage bv ebo i e = 50a 5 - - v collector cut-off current i cbo v cb = 50v - - 0.5 a emitter cut-off current i ebo v eb = 4v - - 0.5 a collector-emitter saturation voltage v ce(sat) i c / i b = 5ma / 0.25ma - - 0.15 v dc current gain h fe v ce = 5v, i c = 1ma 100 250 600 - input resistance r 1 - 3.5 4.7 5.9 k transition frequency f t *2 v ce = 10v, i e = -5ma, f = 100mhz - 250 - mhz *1 each terminal mounted on a reference footprint *2 characteristics of built-in transistor www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 2/9 20121023 - rev.001 downloaded from: http:///
dtc143t series datasheet ll electrical characteristic curves(ta=25 ) fig.1 grounded emitter propagation characteristics f ig.2 grounded emitter output characteristics fig.3 dc current gain vs. collector current fig.4 co llector-emitter saturation voltage vs. collector current www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 3/9 20121023 - rev.001 downloaded from: http:///
dtc143t series datasheet ll di mensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 4/9 20121023 - rev.001 downloaded from: http:///
dtc143t series datasheet ll dimensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 5/9 20121023 - rev.001 downloaded from: http:///
dtc143t series datasheet ll dimensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 6/9 20121023 - rev.001 downloaded from: http:///
dtc143t series datasheet ll dimensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 7/9 20121023 - rev.001 downloaded from: http:///
dtc143t series datasheet ll dimensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 8/9 20121023 - rev.001 downloaded from: http:///
dtc143t series datasheet ll dimensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 9/9 20121023 - rev.001 downloaded from: http:///
downloaded from: http:///
|
