1 4 - elm32d606a - s g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - case r j c 6.4 c /w maximum junction - to - a mbient r ja 62.5 c /w parameter symbol limit unit note drain-source voltage vds 30 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 24 a t a = 10 0 c 15 pulsed d rain current idm 6 0 a 3 avalanche current ias 12. 7 a avalanche energy l=0.1mh eas 8.1 mj power dissipation t c = 25 c pd 19.5 w t c = 10 0 c 7.8 j unction and storage temperature range tj , tstg - 55 to 150 c elm32d606a - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 30 v ? id = 24 a ? rds (on) < 18 m (vgs = 10 v) ? rds (on) < 27 m (vgs = 4.5 v) single n-channel mosfet pin no. pin name 1 gate 2 drain 3 source pin configuration c ircuit to - 2 52-3 (top vi ew) s g d 1 3 2 t a b t a = 25 c . u nless otherwise noted.
2 4 - elm32d606a - s electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 30 v zero g ate voltage drain current idss vds = 2 4 v, vgs = 0v 1 a vds = 20 v, vgs = 0v, t a =12 5 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 10 0 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.30 1.75 2.30 v static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 7 a 13 .5 18.0 m 1 vgs = 4.5 v, id = 6 a 20.0 27.0 forward transconductance gfs vds = 5 v, i d = 7 a 33 s 1 diode forward voltage vsd if= 7 a , vgs = 0v 1.1 v 1 max. body - d iode continuous c urrent is 17 a dynamic parameters input capacitance c iss vgs = 0v, vds = 1 5 v, f = 1mh z 328 pf output capacitance c oss 64 pf reverse transfer capacitance c r ss 42 pf gate resistance rg vgs = 0 v, vds = 0 v, f = 1mh z 3 switching parameters total gate charge q g vgs = 10 v, vds = 1 5 v, id = 7 a 7.6 nc 2 gate - s ource charge q gs 1.1 nc 2 gate - d rain charge q gd 2.5 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 1 5 v , id = 7 a rgen = 6 19 ns 2 turn - o n rise t ime t r 18 ns 2 turn - o ff delay time t d ( of f ) 39 ns 2 turn - o ff fall t ime t f 20 ns 2 body diode r everse recovery time trr i f = 7 a , dif/dt =100a/ s 8.4 ns body diode reverse recovery charge qrr 2.2 n c single n-channel mosfet note : 1. pulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. t a = 25 c . u nless otherwise noted.
3 4 - elm32d606a - s typical electrical and thermal characteristics rev 1.1 3 e - 23 - 4 n - channel enhancement mode field effect transistor p d606ba to - 252 halogen - free & lead - free niko - sem 25 150 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 id=7a 0 0.01 0.02 0.03 0.04 0.05 0 3 6 9 12 15 vgs=10v vgs=4.5v 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 vgs=10v id=7a 25 125 - 20 0 4 8 12 16 20 0 1 2 3 4 5 6 0 4 8 12 16 20 0 2 4 6 8 10 vgs=10v vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=4.5v vgs=3.5v vgs=3v output characteristics i d , drain - to - source current(a) transfer characteristics i d , drain - to - source current(a) v g s , gate - to - source voltage(v) v d s , drain - to - source voltage(v) normalized drain to source on - resistance t j , junction temperature( ? c) capacitance characteristic c , capacitance(pf) v d s , drain - to - source voltage(v) on - resistance vs temperature on - resistance vs gate - to - source r ds(on) on - resistance(ohm) v g s , gate - to - source voltage(v) on - resistance vs drain current r ds(on) on - resistance(ohm) i d , drain - to - source current(a) single n-channel mosfet
4 4 - elm32d606a - s rev 1.1 4 e - 23 - 4 n - channel enhancement mode field effect transistor p d606ba to - 252 halogen - free & lead - free niko - sem single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthjc = 6.4 /w 3.tj - tc = p*rthjc(t) 4.rthjc(t) = r(t)*rthjc 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 single pulse r jc = 6.4 ? c/w tc=25 ? c 0 2 4 6 8 10 0 2 4 6 8 10 vds=15v id=7a ciss coss crss 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 gate charge characteristics characteristics qg , total gate charge(nc) v gs , gate - to - source voltage(v) source - drain diode forward voltage v sd , source - to - drain voltage(v) i s , source current(a) safe operating area single pulse maximum power dissipation i d , drain current(a) power(w) single pulse time(s) v d s , drain - to - source voltage(v) transient thermal response curve r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec] dc 100ms 10ms 1ms 0.1 1 10 100 0.1 1 10 100 note : 1.vgs= 10v 2.tc=25 ? c 3.r jc = 6.4 ? c/w 4.single pulse operation in this area is limited by rds(on) single n-channel mosfet
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