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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -45* i d @ v gs = -12v, t c = 100c continuous drain current -45* i dm pulsed drain current -180 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 1250 mj i ar avalanche current -45 a e ar repetitive avalanche energy 20.8 mj dv/dt peak d iode recovery dv/dt -0.6 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 9.3 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performanceup to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dcto dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened irhms597z60 power mosfet thru-hole (low-ohmic to-254aa) www.irf.com 1 30v, p-channel technology product summary part number radiation level r ds(on) i d irhms597z60 100k rads (si) 0.014 ? -45a* irhms593z60 300k rads (si) 0.014 ? -45a* for footnotes refer to the last page low-ohmic to-254aa features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight * current is limited by package pd-94666c downloaded from: http:///
irhms597z60 pr e-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -45* i sm pulse source current (body diode) -180 v sd diode forward voltage -5.0 v t j = 25c, i s = -45a, v gs = 0v t rr reverse recovery time 150 ns t j = 25c, i f =-45a, di/dt -100a/ s q rr reverse recovery charge 440 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -30 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.032 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.014 ? v gs = -12v, i d = -45a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 39 s v ds = -15v, i ds = -45a i dss zero gate voltage drain current -10 v ds = -24v ,v gs =0v -25 v ds = -24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 160 v gs =-12v, i d = -45a q gs gate-to-source charge 60 nc v ds = -15v q gd gate-to-drain (miller) charge 65 t d (on) turn-on delay time 35 v dd = -15v, i d = -45a t r rise time 150 v gs =-12v, r g = 2.35 ? t d (off) turn-off delay time 100 t f fall time 80 l s + l d total inductance 6.8 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 7844 v gs = 0v, v ds = -25v c oss output capacitance 4508 p f f = 1.0mhz c rss reverse transfer capacitance 564 r g gate resistance 2.1 f = 1.0mhz, open drain na nh ns a note: corresponding spice and saber models are available on international rectifier web site. thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.6 r thcs case-to-sink 0.21 c/w r thja junction-to-ambient 48 typical socket mount * current is limited by package ? downloaded from: http:///
www.irf.com 3 pre-irradiation irhms597z60 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -30 -30 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -4.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs =-20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds = -24v, v gs =0v r ds(on) static drain-to-source 0.014 0.014 ? v gs = -12v, i d = -45a on-state resistance (to-3) r ds(on) static drain-to-source on-state 0.014 0.014 ? v gs = -12v, i d = -45a resistance(low-ohmicto-254aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number irhms597z602. part number irhms593z60 fig a. typical single event effect, safe operating area v sd diode forward voltage -5.0 -5.0 v v gs = 0v, i s = -45a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. typical single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.5 278.5 36 - 30 - 30 - 30 - 30 - 30 i 59.7 320 31 - 30 - 30 - 30 - 30 - 25 au 81.4 332 27 - 30 - 30 - 30 - 25 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 vgs vds br i au downloaded from: http:///
irhms597z60 pr e-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 10000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 10000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 55 . 566 . 57 -v gs , gate-to-source voltage (v) 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = -20v 60 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = -12v i d = -45a downloaded from: http:///
www.irf.com 5 pre-irradiation irhms597z60
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 14000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s 01234 -v sd , source-to-drain voltage (v) 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 25c 0 20 40 60 80 100 120 140 160 180 q g, total gate charge (nc) 0 4 8 12 16 20 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v i d = -45a for test circuit see figure 13 downloaded from: http:///
irhms597z60 pr e-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature fig 10a. switching time test circuit
1 0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) -i , drain current (a) c d limited by package downloaded from: http:///
www.irf.com 7 pre-irradiation irhms597z60 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 3500 i d top bottom -20a -28.5a -45a starting t j , junction temperature (c) e as , single pulse avalanche energy (mj) downloaded from: http:///
irhms597z60 pr e-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd -30v, starting t j = 25c, l =1.1mh peak i l = -45a, v gs = -12v i sd -45a, di/dt -184a/ s, v dd -30v, t j 150c footnotes: case outline and dimensions low-ohmic to-254aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2008 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not es : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. downloaded from: http:///

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