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savantic semiconductor product specification silicon pnp power transistors 2SA1185 d escription with to-3pn package high current capability low collector saturation voltage applications high power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -50 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i cm collector current-peak -15 a i bm base current-peak -5 a p c collector power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1185 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-0.1a ;i b =0 -50 v v cesat collector-emitter saturation voltage i c =-7a; i b =-0.7a -0.8 v v be base-emitter on voltage i c =-7a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-50v; i e =0 -1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 60 320 h fe-2 dc current gain i c =-7a ; v ce =-5v 20 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 250 pf f t transition frequency i c =-0.5a ; v ce =-5v 100 mhz h fe-1 classifications q p o 60-120 100-200 160-320 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1185 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm) downloaded from: http:///

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