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rf & protection devices data sheet revision 1.1, 2012-09-17 bfp640esd robust low noise silicon germ anium bipolar rf transistor
edition 2012-09-17 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
bfp640esd data sheet 3 revision 1.1, 2012-09-17 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 bfp640esd, robust low noise silicon germanium bipolar rf transistor revision history: 2012-09-17, revision 1.1 page subjects (major changes since previous revision) this data sheet replaces the revision from 2010-06-29. the product itself has not been changed and the device characteristics remain unchanged. only the product description and information available in the data sheet have been expanded and updated.
bfp640esd table of contents data sheet 4 revision 1.1, 2012-09-17 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.4 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.5 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 package information sot343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 table of contents
bfp640esd list of figures data sheet 5 revision 1.1, 2012-09-17 figure 4-1 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5-1 bfp640esd testing circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a. . . . . . . . . . . . . 17 figure 5-3 dc current gain h fe = f ( i c ), v ce = 3 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 5-4 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v. . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 18 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 19 figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 5-8 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters . . . . . . . . . . . . . . . . . 20 figure 5-9 collector base capacitance c cb = f ( v cb ), f = 1 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-10 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-11 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . . 22 figure 5-12 maximum power gain g max = f ( v ce ), i c = 30 ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 22 figure 5-13 input matching s 11 = f ( f ), v ce = 3 v, i c = 6 / 30 ma. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 5-14 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 6 / 30 ma . . . . . . . . . . . 23 figure 5-15 output matching s 22 = f ( f ), v ce = 3 v, i c = 6 / 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 5-16 noise figure nf min = f ( f ), v ce = 3 v, i c = 6 / 30 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 5-17 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . 25 figure 5-18 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 25 figure 7-1 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-2 package footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-3 marking description (marking bfp 640esd: t4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-4 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 list of figures
bfp640esd list of tables data sheet 6 revision 1.1, 2012-09-17 table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4-1 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5-1 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-2 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-3 ac characteristics, v ce = 3 v, f = 150 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 5-4 ac characteristics, v ce = 3 v, f = 450 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-5 ac characteristics, v ce = 3 v, f = 900 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-6 ac characteristics, v ce = 3 v, f = 1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-7 ac characteristics, v ce = 3 v, f = 1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-8 ac characteristics, v ce = 3 v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 5-9 ac characteristics, v ce = 3 v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 5-10 ac characteristics, v ce = 3 v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 5-11 ac characteristics, v ce = 3 v, f = 10 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 list of tables
bfp640esd product brief data sheet 7 revision 1.1, 2012-09-17 1 product brief the bfp640esd is a very low noise wideband npn bipola r rf transistor. the device is based on infineon?s reliable high volume silicon germaniu m carbon (sige:c) heteroj unction bipolar technolo gy. the collector design supports voltages up to v ceo = 4.1 v and currents up to i c = 50 ma. the device is especially suited for mobile applications in which low power co nsumption is a key requirement. the typical transition frequency is approximately 45 ghz, hence the device offers high po wer gain at frequencies up to 10 ghz in amplifier applications. the transistor is fitted with internal pr otection circuits, which en hance the robustness against electrostatic discharge (esd) and high levels of rf input power. the device is housed in an easy to use plastic package with visible leads.
bfp640esd features data sheet 8 revision 1.1, 2012-09-17 2 features applications as low noise amplifier (lna) in ? mobile portable and fixed connectivity applications : wlan 802.11a/b/g/n, wimax 2.5 / 3.5 / 5 ghz, uwb, bluetooth ? satellite communication systems: navigation systems (gps, glonass), satellite radio (sdars, dab) and c-band lnb ? multimedia applications such as mobile / portable tv, catv, fm radio ? 3g/4g umts/lte mobile phone applications ? ism applications like rke, am r and zigbee, as well as for emerging wireless applications as discrete active mixer, amplif ier in vcos and buffer amplifier attention: esd (electrostatic discharge) sensitive device, observe handling precautions ? robust very low noise amplifier based on infineons reliable, high volume sige:c wafer technology ? 2 kv esd robustness (hbm) due to integrated protection circuits ? high maximum rf input power of 21 dbm ? 0.65 db minimum noise figure typical at 1.5 ghz, 0.7 db at 2.4 ghz, 6 ma ? 26.5 db maximum gain g ms typical at 1.5 ghz, 23 db g ms at 2.4 ghz, 30 ma ? 27 dbm oip 3 typical at 2.4 ghz, 30 ma ? easy to use pb-free (rohs comp liant) and halogen-free standard package with visible leads ? qualification report according to aec-q101 available product name package pin configuration marking bfp640esd sot343 1 = b 2 = e 3 = c 4 = e t4s
bfp640esd maximum ratings data sheet 9 revision 1.1, 2012-09-17 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo open base ?4.1v t a = 25 c ?3.6v t a = -55 c collector base voltage 1) 1) low v cbo due to integrated protection circuits. v cbo open emitter ?4.8v t a = 25 c ?4.3v t a = -55 c collector emitter voltage 2) 2) v ces is identical to v ceo due to integrated protection circuits. v ces e-b short circuited ?4.1v t a = 25 c ?3.6v t a = -55 c base current 3) 3) sustainable reverse bias current is high due to integrated protection circuits. i b -10 6 ma ? collector current i c ?50ma? rf input power 4) 4) rf input power is high due to integrated protection circuits. p rfin ?21dbm? esd stress pulse 5) 5) esd robustness is high due to integrated protection circuits. v esd -2 2 kv hbm, all pins, acc. to jesd22-a114 total power dissipation 6) 6) t s is the soldering point temperature. t s measured on the emitter lead at the soldering point of the pcb. p tot ?200mw t s 88 c junction temperature t j ?150c? storage temperature t stg -55 150 c ?
bfp640esd thermal characteristics data sheet 10 revision 1.1, 2012-09-17 4 thermal characteristics figure 4-1 total power dissipation p tot = f ( t s ) table 4-1 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1)for the definition of r thjs please refer to application note an077 (thermal resistance calculation). r thjs ?310?k/w? 0 25 50 75 100 125 150 0 50 100 150 200 250 t s [c] ptot [mw]
bfp640esd electrical characteristics data sheet 11 revision 1.1, 2012-09-17 5 electrical characteristics 5.1 dc characteristics 5.2 general ac characteristics table 5-1 dc characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 4.1 4.7 ? v i c =1ma, i b =0 open base collector emitter leakage current i ces ??500na v ce =2v, v be =0 e-b short circuited collector base leakage current i cbo ??500na v cb =2v, i e =0 open emitter emitter base leakage current i ebo ??10 a v eb =0.5v, i c =0 open collector dc current gain h fe 110 180 270 v ce =3v, i c =30ma pulse measured table 5-2 general ac characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. transition frequency f t ?45?ghz v ce =3v, i c =30ma, f =1ghz collector base capacitance c cb ?0.08?pf v cb =3v, v be =0 v f =1mhz emitter grounded collector emitte r capacitance c ce ?0.4?pf v ce =3v, v be =0 v f =1mhz base grounded emitter base capacitance c eb ?0.7?pf v eb =0.4v, v cb =0 v f =1mhz collector grounded
bfp640esd electrical characteristics data sheet 12 revision 1.1, 2012-09-17 5.3 frequency dependent ac characteristics measurement setup is a test fixture with bias t?s in a 50 ? system, t a = 25 c figure 5-1 bfp640esd testing circuit table 5-3 ac characteristics, v ce = 3 v, f =150mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?34? i c =6ma high linearity operation point g ms ?39.5? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?25? i c =6ma high linearity operation point s 21 ?35? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.6? i c =6ma associated gain g ass ?30? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?11? i c =30ma 3rd order intercept point oip 3 ?25? i c =30ma in out bias -t bias-t b (pin 1) e c e vc top view vb
bfp640esd electrical characteristics data sheet 13 revision 1.1, 2012-09-17 table 5-4 ac characteristics, v ce = 3 v, f =450mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?29? i c =6ma high linearity operation point g ms ?34.5? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?24.5? i c =6ma high linearity operation point s 21 ?32? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.6? i c =6ma associated gain g ass ?28.5? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?11? i c =30ma 3rd order intercept point oip 3 ?25? i c =30ma table 5-5 ac characteristics, v ce = 3 v, f =900mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?26? i c =6ma high linearity operation point g ms ?30.5? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?23.5? i c =6ma high linearity operation point s 21 ?28? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.6? i c =6ma associated gain g ass ?26? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?11.5? i c =30ma 3rd order intercept point oip 3 ?26? i c =30ma
bfp640esd electrical characteristics data sheet 14 revision 1.1, 2012-09-17 table 5-6 ac characteristics, v ce = 3 v, f = 1.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?23.5? i c =6ma high linearity operation point g ms ?26.5? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?21? i c =6ma high linearity operation point s 21 ?24? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.65? i c =6ma associated gain g ass ?23.5? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?12? i c =30ma 3rd order intercept point oip 3 ?26.5? i c =30ma table 5-7 ac characteristics, v ce = 3 v, f = 1.9 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?22.5? i c =6ma high linearity operation point g ms ?25? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?19.5? i c =6ma high linearity operation point s 21 ?22? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.65? i c =6ma associated gain g ass ?22? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?12? i c =30ma 3rd order intercept point oip 3 ?27? i c =30ma
bfp640esd electrical characteristics data sheet 15 revision 1.1, 2012-09-17 table 5-8 ac characteristics, v ce = 3 v, f = 2.4 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?21? i c =6ma high linearity operation point g ms ?23? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?18? i c =6ma high linearity operation point s 21 ?20? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.7? i c =6ma associated gain g ass ?20? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?12.5? i c =30ma 3rd order intercept point oip 3 ?27? i c =30ma table 5-9 ac characteristics, v ce = 3 v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ma ?19? i c =6ma high linearity operation point g ms ?19? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?15? i c =6ma high linearity operation point s 21 ?17? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.8? i c =6ma associated gain g ass ?16? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?12.5? i c =30ma 3rd order intercept point oip 3 ?26.5? i c =30ma
bfp640esd electrical characteristics data sheet 16 revision 1.1, 2012-09-17 notes 1. g ms = is 21 / s 12 i for k < 1; g ma = is 21 / s 12 i(k-(k 2 -1) 1/2 ) for k > 1. 2. in order to get the nf min values stated in this chapter the test fi xture losses have been subtracted from all measured result. 3. oip 3 value depends on termination of all intermodulati on frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz. table 5-10 ac characteristics, v ce = 3 v, f = 5.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ma ?14? i c =6ma high linearity operation point g ma ?14.5? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?11? i c =6ma high linearity operation point s 21 ?12.5? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?1.05? i c =6ma associated gain g ass ?11.5? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?12.5? i c =30ma 3rd order intercept point oip 3 ?26? i c =30ma table 5-11 ac characteristics, v ce = 3 v, f =10ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?10? i c =6ma high linearity operation point g ms ?10.5? i c =30ma transducer gain db z s = z l =50 ? low noise operation point s 21 ?4.5? i c =6ma high linearity operation point s 21 ?6? i c =30ma minimum noise figure db z s = z opt minimum noise figure nf min ?2? i c =6ma associated gain g ass ?7? i c =6ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?11? i c =30ma 3rd order intercept point oip 3 ?25.5? i c =30ma
bfp640esd electrical characteristics data sheet 17 revision 1.1, 2012-09-17 5.4 characteristic dc diagrams figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a figure 5-3 dc current gain h fe = f ( i c ), v ce = 3 v 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce [v] i c [ma] ib=25a ib=75a ib=125a ib=175a ib=225a ib=275a ib=325a 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce [v] i c [ma] ib=25a ib=75a ib=125a ib=175a ib=225a ib=275a ib=325a 100 1000 0.1 1 10 100 i c [ma] h fe
bfp640esd electrical characteristics data sheet 18 revision 1.1, 2012-09-17 figure 5-4 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.40.50.60.70.80.9 v be [v] i c [ma] 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 0.40.50.60.70.80.9 v be [v] i b [ma]
bfp640esd electrical characteristics data sheet 19 revision 1.1, 2012-09-17 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 0.2 0.3 0.4 0.5 0.6 v eb [v] i b [a]
bfp640esd electrical characteristics data sheet 20 revision 1.1, 2012-09-17 5.5 characteristic ac diagrams figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v figure 5-8 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 i c [ma] f t [ghz] 4.00v 3.00v 2.50v 2.00v 1.00v 0 10 20 30 40 50 ?5 0 5 10 15 20 25 30 i c [ma] oip 3 [dbm] 2v, 1.5ghz 3v, 1.5ghz 2v, 2.4ghz 3v, 2.4ghz
bfp640esd electrical characteristics data sheet 21 revision 1.1, 2012-09-17 figure 5-9 collector base capacitance c cb = f ( v cb ), f = 1 mhz figure 5-10 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 30 ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 v cb [v] c cb [pf] 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 f [ghz] g [db] g ms g ma |s 21 | 2 g ms
bfp640esd electrical characteristics data sheet 22 revision 1.1, 2012-09-17 figure 5-11 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz figure 5-12 maximum power gain g max = f ( v ce ), i c = 30 ma, f = parameter in ghz 0 10 20 30 40 50 60 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 i c [ma] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz 0 1 2 3 4 5 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 v ce [v] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz
bfp640esd electrical characteristics data sheet 23 revision 1.1, 2012-09-17 figure 5-13 input matching s 11 = f ( f ), v ce = 3 v, i c = 6 / 30 ma figure 5-14 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 6 / 30 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 10 0.03 to 10 ghz 30 ma 6 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.45ghz 0.9ghz 1.9ghz 2.4ghz 5.5ghz 10ghz i c = 6.0ma i c = 30ma
bfp640esd electrical characteristics data sheet 24 revision 1.1, 2012-09-17 figure 5-15 output matching s 22 = f ( f ), v ce = 3 v, i c = 6 / 30 ma figure 5-16 noise figure nf min = f ( f ), v ce = 3 v, i c = 6 / 30 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 10 0.03 to 10 ghz 30 ma 6 ma 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 nfmin [db] f [ghz] i c = 6.0ma i c = 30ma
bfp640esd electrical characteristics data sheet 25 revision 1.1, 2012-09-17 figure 5-17 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz figure 5-18 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. t a = 25c. 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 f = 1.9ghz f = 5.5ghz f = 2.4ghz f = 0.9ghz f = 0.45ghz f = 10ghz nfmin [db] i c [ma] 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 f = 1.9ghz f = 5.5ghz f = 2.4ghz f = 0.9ghz f = 0.45ghz f = 10ghz nf50 [db] i c [ma]
bfp640esd simulation data data sheet 26 revision 1.1, 2012-09-17 6 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the bfp640esd spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very qu ickly and conveniently. the model alre ady contains the package parasitics and is ready to use for dc- and high frequency simulations. the terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the bfp640esd spice gp model reflects the typical dc- and rf-performan ce within the limitations wh ich are given by the spice gp model itself. besides the dc charac teristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
bfp640esd package information sot343 data sheet 27 revision 1.1, 2012-09-17 7 package information sot343 figure 7-1 package outline figure 7-2 package footprint figure 7-3 marking description (marking bfp640esd: t4s) figure 7-4 tape dimensions sot343-po v08 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 3 2 4 1 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 sot343-fp v08 0.8 1.6 1.15 0.9 xys 56 date code (ym) 2005, june type code manufacturer pin 1 sot323-tp v02 0.2 4 2.15 8 2.3 1.1 pin 1
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