UPG110B upg110p features ? wide-band: 2 to 8 ghz ? high gain: 15 db at f = 2 to 8 ghz ? medium power: +14 dbm typ at f = 2 to 8 ghz ? input/output impedance matched to 50 w ? hermetically sealed package assures high reliability 2-8 ghz wide-band amplifier gain vs. frequency and temperature electrical characteristics 1 (t a = 25 3 c, z s = z l = 50 w, v dd = +8 v, f = 2.0 to 8.0 ghz) part number UPG110B/p package outline fa/chip symbols parameters units min typ max i dd supply current ma 65 135 180 g p power gain db 12 15 d g l gain flatness db 1.5 rl in input return loss db 6 10 rl out output return loss db 7 10 i sol isolation db 30 40 p 1db output power at 1 db compression point dbm 10 14 ip 3 ssb third order intercept point dbm 25 note: 1. when handling the device, a ground strap should be used to prevent electric static discharge (esd) that can damage the ic. 20 15 10 5 0 -5 -10 0 2 4 6 8 10 t = -25?c t = +25?c t = +75?c gain, g p (db) frequency, f (ghz) description the UPG110B is a gaas monolithic integrated circuit de- signed for use as a wide-band amplifier from 2 ghz to 8 ghz. the device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. the upg110 is available in a 4 pin flat package and in chip form. california eastern laboratories
absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v dd drain voltage v +10 v in input voltage v -5 to +0.6 p in input power dbm +10 p t total power dissipation w 1.5 t c case temperature c -65 to +125 t stg storage temperature c -65 to +175 output power, p out (dbm) input return loss, rl in (db) output retun loss, rl out (db) rl in rl out 0 1 2 3 4 5 6 7 8 9 10 0 -10 -20 -30 0 1 2 3 4 5 6 7 8 9 10 0 -20 -40 -60 -80 isolation, i sol (db) f = 2 ghz f = 5 ghz f = 8 ghz 20 10 0 -20 -10 0 10 UPG110B, upg110p output power vs. input power and frequency input power, p in (dbm) frequency, f (ghz) input/output return loss vs. frequency frequency, f (ghz) isolation vs. frequency output power vs. input power and gain control equivalent circuit r l1 l l1 r f1 l in in l 1 r g1 l g1 r s1 r g2 c 1 c s l 2 c4 r l2 v dd r 1 l l2 l l3 l3 c2 c3 r g3 out r 2 c rf r f2 note: 1. operation in excess of any one of these parameters may result in permanent damage. note: gain control can be achieved by applying a negative voltage (v g ) to the input pin. 0 10 20 -10 -10 0 10 v g = 0 v idd = 130 ma v g = -0.3 v idd = 110 ma v g = -0.5 v i dd = 99 ma v g = -0.7 v i dd = 91 ma v g = -0.9 v i dd = 83 ma 0 db -5.3 db -7.9 db -11.7 db -3.1 db output power, p out (dbm) input power, p in (dbm) typical performance curves (t a = 25 c)
UPG110B, upg110p typical scattering parameters v dd = 8v, i dd = 135 ma frequency s 11 s 21 s 12 s 22 ks 21 ghz mag ang mag ang mag ang mag ang db 0.05 0.375 -78 1.075 14 0.001 -171 0.967 -26 25.7 0.6 0.10 0.249 -101 2.899 -50 0.001 143 0.862 -51 41.6 9.2 0.20 0.146 -134 4.321 -123 0.001 133 0.648 -85 65.8 12.7 0.40 0.103 -164 5.421 -177 0.002 97 0.384 -132 38.9 14.7 0.60 0.074 -178 5.860 151 0.003 88 0.224 -157 26.7 15.4 0.80 0.047 171 6.068 119 0.006 64 0.182 -126 13.3 15.7 1.00 0.013 125 5.176 92 0.008 38 0.338 -152 10.7 14.3 1.50 0.131 -68 4.863 53 0.006 0 0.103 127 16.7 13.7 2.00 0.230 -91 4.579 5 0.006 -16 0.074 -96 17.2 13.2 2.50 0.310 -113 4.179 -40 0.007 -31 0.161 -120 15.1 12.4 3.00 0.361 -132 3.879 -81 0.008 -45 0.189 -137 13.6 11.8 3.50 0.415 -150 3.749 -120 0.009 -60 0.180 -144 11.9 11.5 4.00 0.437 -173 3.845 -159 0.010 -74 0.177 -142 10.2 11.7 4.50 0.433 165 3.946 158 0.012 -89 0.207 -136 8.2 11.9 5.00 0.385 129 4.104 114 0.014 -110 0.282 -141 6.7 12.3 5.50 0.321 87 4.233 67 0.016 -134 0.364 -160 5.7 12.5 6.00 0.298 40 4.354 14 0.015 -164 0.357 167 6.0 12.8 6.50 0.382 -4 3.848 -35 0.015 -171 0.294 143 6.7 11.7 7.00 0.475 -36 3.553 -80 0.015 177 0.251 104 6.7 11.0 7.50 0.548 -57 3.334 -125 0.017 164 0.222 51 5.8 10.5 8.00 0.554 -73 3.290 -173 0.022 153 0.216 -1 4.5 10.3 8.50 0.460 -76 3.530 132 0.032 141 0.175 -21 3.4 11.0 9.00 0.585 -57 3.178 70 0.047 116 0.269 9 2.2 10.0 9.50 0.771 -71 1.665 9 0.057 83 0.512 -23 2.0 4.4 10.00 0.769 -82 0.871 -28 0.086 53 0.558 -50 2.3 -1.2 UPG110B upg110p (chip) UPG110B package outline fa 4.5 max lead 2 & 4 0.4 0.06 4.6 max 4.1 min lead 1 & 3 0.6 0.06 4.1 min +0.2 -0.1 0.7 1.48 max 0.1 0.06 1 2 3 4 1. v dd 2. in 3. non connection 4. out case: gnd outline dimensions (units in mm) v dd gnd in out gnd gnd gnd 1.1 mm 1.3 mm v dd 39 pf 50 to 100 m m 200 to 500 m m gnd 5 less than 300 m m 200 to 500 m m 500 to 1000 m m 1 2 3 4 less than 200 m m bonding pad size: 200 m m x 200 m m recommended chip assembly conditions die attachment atmosphere: n2 gas temperature: 320 5 c ausn preform: upg100p, 101p, 103p 0.5 x 0.5 x 0.05 (mm), 1 pc upg102p 1.2 x 1.2 x 0.05 (mm), 1 pc *the hard solder such as ausi or auge which has higher melting point than ausn should not be used. base material: cuw, cu, kv (other material should not be used) epoxy die attach is not recommended. bonding machine: tcb (usb is not recommended) wire: 30 m m diameter au wire temperature: 260 10 c strength: 44 5g atmosphere: n2 gas exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com printed in usa on recycled paper -10/97 data subject to change without notice
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