ec 73 2n7002k u 60 v 0.3 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 1 of 6 4l17n-rev.f001 description it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on-resis tance with high repetitive avalanche rating. these features combine to make th is design an extremely efficient and reliable devic e for use in power switching application and a wide variety of other a pplications. features advanced mosfet process technology special designed for pwm, load switching and general purpose applications ultra low on-resistance with low gate charge fast switching and reverse body recovery esd rating 2000v hbm 150 operating temperature main product characteristics v dss 60v r ds (on) 3 (max.) i d 0.3a absolute maximum ratings thermal characteristics symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 0.3 a i dm pulsed drain current 1.2 a p d @tc = 25c power dissipation 0.63 w v ds drain-source voltage 60 v v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to +150 symbol symbol typ. max. units r ja junction-to-ambient t Q 10 s 200 /w
ec 73 2n7002k u 60 v 0.3 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 2 of 6 4l17n-rev.f001 electrical characteristics (t a =25 unless otherwise noted) source-drain ratings and characteristics parameter symbol condition min typ max unit drain-to-source breakdown voltage v (br)dss v gs = 0v, i d = 250 a 60 v v gs =10v, i d =0.5a 1.6 3 static drain-to-source on-resistance r ds(on) v gs =5v, i d =0.05a 3.5 gate threshold voltage v gs(th) v ds = vgs, i d = 250 a 1 2.5 v drain-to-source leakage current i dss v ds = 60v,v gs = 0v 1 ua v gs =5v,v ds =0v 100 na gate-to-source forward leakage i gss v gs =20v,v ds =0v 10 ua turn-on delay time td(on) 25 turn-off delay time td(off) v gs =10v, v ds =30v, i d =0.2a,r gen =10 45 ns input capacitance ciss 40 output capacitance coss 16.6 reverse transfer capacitance crss v gs = 0v v ds = 25v ? = 1mhz 9.5 pf parameter symbol condition min typ max unit continuous source current (body diode) i s 0.3 a pulsed source current (body diode) i sm mosfet symbol showing the integral reverse p-n junction diode 1.2 a diode forward voltage v sd i s =0.2a, v gs =0v 1.3 v
ec 73 2n7002k u 60 v 0.3 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 3 of 6 4l17n-rev.f001 test circuits and waveforms
ec 73 2n7002k u 60 v 0.3 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 4 of 6 4l17n-rev.f001 typical electrical and thermal characteristics
ec 73 2n7002k u 60 v 0.3 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 5 of 6 4l17n-rev.f001 ordering and marking information ec732n7002ku xx x part number package marking EC732N7002KUB1R sot23-3l u72 b1:sot23-3l r tape & reel
ec 73 2n7002k u 60 v 0.3 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 6 of 6 4l17n-rev.f001 sot23 package outline dimension
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