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| Datasheet File OCR Text: |
| bas16t/baw56t/bav70t/BAV99T switching diode features power dissipation p d: 150 mw (tamb=25 ) forward current i f: 75 m a reverse voltage v r : 85 v operating and storage junction temperature range t j , t stg : -55 to +150 bas16t marking: a2 baw56t marking: jd bav70t marking: jj BAV99T marking: je electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 85 v i r1 v r =75v 2 a reverse voltage leakage current i r2 v r =25v 0.03 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv diode capacitance c d v r =0v, f=1mhz 1.5 pf reverse recovery time t r r 4 ns http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. bas16t/baw56t/bav70t/BAV99T 0.20 sot-523 1.60 1.00 0.30 1.60 0.50 0.81 r o hs wej electronic co.,ltd
http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. bas16t/baw56t/bav70t/BAV99T r o hs wej electronic co.,ltd |
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