roducts., una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 designer's? data sheet npn silicon power transistors switchmode bridge series .. . specifically designed for use in half bridge and full bridge off line converters. excellent dynamic saturation characteristics rugged rbsoa capability collector-emitter sustaining voltage ? vceo(sus) ? 400 v collector-emitter breakdown ? v(br)ces ? 650 v state-of-art bipolar power transistor design fast inductive switching: tfj = 25 ns (typ) @ 100c tc = 50 ns (typ) @ 100c tsv = 1 us(typ)@100c ? ultrafast fbsoa specified ? 100c performance specified for: rbsoa inductive load switching saturation voltages leakages maximum ratings mj16110* MJW16110* power transistors 15 amperes 400 volts 175 and 135 watts rating collector-emitter sustaining voltage collector-emitter breakdown voltage emitter-base voltage collector current ? continuous ? pulsed (1) base current ? continuous ? pulsed (1) total power dissipation @ tc = 25c @tc = 100c derated above 25c operating and storage temperature symbol vceo(sus) vces vebo "c 'cm ib !bm pd tj> tstg mj16110 MJW16110 400 650 6 15 20 10 15 175 100 1 -65(0200 135 54 1.09 -55to150 unit vdc vdc vdc adc adc watts w/c c thermal characteristics thermal resistance ? junction to case maximum lead temperature for soldering purposes 1/8" from case for 5 seconds r0jc tl 1 0.92 275 c/w c (formerly to-3) mj16110 to-247ae MJW16110 (1) pulse test: pulse width = 5 ms, duty cycle < 10%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mj16110MJW16110 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) collector-emitter sustaining voltage (table 1) (ic = 20 madc, ib = 0) collector cutoff current (vce = 650 vdc, vbe(off) = 1 5 v) (vce = 650 vdc, vbe(off) = 1-5 v, tc = 100c) collector cutoff current (vce = 650 vdc, rbe = 50 ij, tc = 100c) emitter-base leakage (veb = 6 vdc, ic = 0) vceo(sus) !cev !cer iebo 400 ? ? ? ? ? ? ? ? 100 1000 1000 10 vdc nadc jiadc i^adc on characteristics (1) collector-emitter saturation voltage (ic = 5adc, le = 0.5adc) (ic = 10 ado, |b = 1.2adc) (ic = 10adc, !b = 2adc) (ic = 10 adc, ib = 2 adc, tc = 100c) base-emitter saturation voltage (ic = 10 adc, ib = 2 adc) (ic = 10 adc, ib = 2 adc, tc = 100c) dc current gain (ic = 15 adc, vce = 5 vdc) vce(sat) vbe(sat) hfe ? ~~ ? ? ? 6 0.3 0.7 0.3 0.4 1.2 1.2 12 0.9 2.0 1.0 1.5 1.5 1.5 20 vdc vdc ? dynamic characteristics dynamic saturation output capacitance (vce = 10 vdc, ie = 0, ftest = 1 khz) vce(dsat) cob see figures 11, 12, and 13 ? ? 400 v pf switching characteristics inductive load (table 1) storage crossover fall time storage crossover fall time ic = 10a, ib1=1 a, \/f*t-/ a\ ^ \ vbe(off) v' vce(pk) = 250 v tj = 25c tj = 100c tsv tc tfi tsv tc tfi ? ? ? ? ? ? 700 45 20 1000 50 25 1500 150 75 2000 200 125 ns resistive load (table 2) delay time rise time storage time fall time storage time fall time vcc = 250 v, pw = 30 us, ib2 = 2a, rb2 = 4u vnc/?m - <5 v vbe(off) j v td tr ts tf ts tf ? ? ? ? ? ? 15 330 800 110 500 250 ? ? ? ? ? ? ns (1) pulse test: pulse width = 300 [is, duty cycle < 2%.
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