preliminary RT3TLLM composite transistor with resistor for switching application silicon epitaxial type i sahaya electronics corporatio n description RT3TLLM is compound transistor built with rt1n230 chip and rt1p230 chip in sc-88 package. feature silicon epitaxial type each transistor elemen ts are independent. mini package for easy mounting application inverted circuit, switching circuit, interface circuit, driver circuit outline drawing unit mm maximum rating (ta=25 ) (rtr1_npn, rtr2_pnp) symbol parameter rating unit v cbo collector to base voltage 50 v v ebo emitter to base voltage 6 v v ceo collector to emitter voltage 50 v i c collector current 100 ma i cm peak collector current 200 ma p c collector dissipation total, ta=25 150 mw t j junction temperature 150 t stg storage temperature -55 150 pnp built in transistor of ? ?sign is abbreviation. marking l t l . terminal connector ? emitter1 ? base1 ? collector2 ? emitter2 ? base2 :collector1 jeita sc-88 r1 rtr1 rtr2 r1
preliminary RT3TLLM composite transistor with resistor for switching application silicon epitaxial type i sahaya electronics corporatio n electrical characteristics (ta=25 ) (rtr1_npn, rtr2_pnp) limits symbol parameter test conditions max typ min unit v (br)ceo collector to emitter break down voltage i c =100a r be = 50 v i cbo collector cut off current v cb =50v i e =0ma 0.1 a h fe dc forward current gain v ce =5v i c=1ma 100 - v ce(sat) collector to emitter saturation voltage i c =10ma i b =0. 5ma 0.3 v r 1 input resistor 1.5 2.2 2.9 k ? rtr1 200 f t gain band width product v ce =6v i e =10ma rtr2 150 mhz pnp built in transistor of ? ?sign is abbreviation. typical characteristics (rtr1_npn) collector current vs input off voltage 10 100 1000 0.0 0.5 1.0 1.5 2.0 input off voltage vi(off) (v) collector current ic (a) vce=5v input on voltage vs collectr current 0.1 1 10 1 10 100 collector currentic(ma) input on voltage vi(on) (v) vce=0.2v dc forward current gain vs collector current 10 100 1000 10000 0.1 1 10 100 collector currentic(ma) dc forward current gain hfe vce=5v
preliminary RT3TLLM composite transistor with resistor for switching application silicon epitaxial type i sahaya electronics corporatio n typical characteristics (rtr2_pnp) input on voltage vs collectr current -0.1 -1 -10 -1 -10 -100 collector currentic(ma) input on voltage vi(on) (v) vce=-0.2v dc forward current gain vs collector current 10 100 1000 10000 -0.1 -1 -10 -100 collector currentic(ma) dc forward current gain hfe vce=-5v collector current vs input off voltage -10 -100 -1000 -0.0 -0.5 -1.0 -1.5 -2.0 input off voltage vi(off) (v) collector current ic (a) vce=-5v
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. aug.2010
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