t4 - lds - 0130, rev . 2 ( 6/ 14 /13 ) ?201 3 microsemi corporation page 1 of 6 1N6843CCU3 compliant 100 v olt , 10 a mp d ual s chottky c ommon c athode c enter tap rectifier qualified per mil - prf - 19500/ 681 qualified levels: jan, jantx, and jantxv description this low - pro file 1n684 3cc u3 schottky rectifier device is military qualified up to a jan txv level for high - reliability applications. u3 (smd - 0. 5) package important: for the latest information, visit our website http://www .microsemi.com . features ? surface mount equivalent of jedec registered 1n 684 2. ? low p rofile c eramic smd. ? ultrasonic a luminum wire b onds. ? jan, jantx, jantxv qualifications available per mil - prf - 19500/ 681. ? rohs compliant by design . applications / benefits ? high s urge r ating. ? low re verse l eakage current. ? low f orward v oltage. ? seam w elded p ackage. ? low c apacitance. maximum ratings @ t c = +25 o c unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to + 150 o c thermal resistance junction - to - case on each leg entire package r ? jc 3.5 1.75 o c /w thermal resistance junction - to - ambient each leg r ? ja 40 o c /w working peak reverse voltage v rwm 100 v average rectified output current per leg (see figure 1 ) i o 15 a non - repetitive sinusoidal surge current @ t p = 8.3 ms i fsm 100 a downloaded from: http:///
t4 - lds - 0130, rev . 2 ( 6/ 14 /13 ) ?201 3 microsemi corporation page 2 of 6 1N6843CCU3 mechanical and packaging ? case: ceramic and g old over n ickel p lated s teel . ? terminals: gold over n ickel p lated t ungsten/ c opper . ? marking: part number, date code, a = a node . ? p olarity: see s chematic on last page. ? weight: approximately 0.9 grams . ? see p ackage d imensions on last page. part nomenclature jan 1n684 3 cc u3 reliability level jan = jan leve l jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee electrical characteristic s t able ) smd - 0.5 surface mount common cathode polarity symbols & definitions symbol definition c j junction capacitance: the junction capacitance in pf at a specified frequency (typic ally 1mhz) and specified voltage. i f forward current: the forward current dc value, no alternating component. i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. t j junction temperature: the temperature of a semiconductor junction. v f forward voltage: the forward voltage the device will exhibit at a specified current (typic ally shown as maximu m value). v r reverse voltage: the reverse voltage dc value, no alternating component. downloaded from: http:///
t4 - lds - 0130, rev . 2 ( 6/ 14 /13 ) ?201 3 microsemi corporation page 3 of 6 1N6843CCU3 electrical characteristics @ t a = + 25 o c unless otherwise noted parameters / test conditions symbol min. max. unit character is tics per leg forward voltage* i f = 5 a , 300 s pulse i f = 15 a , 300 s pulse i f = 30 a , 300 s pulse i f = 5 a, t c = +125 c , 300 s pulse i f = 15 a, t c = +125 c , 300 s pulse i f = 30 a, t c = +125 oc, 300 s pulse i f = 5 a, t c = - 55 c, 300 s pulse i f = 15 a, t c = - 55 c, 300 s pulse i f = 30 a, t c = - 55 oc, 300 s pulse v f 0.77 1.03 1.27 0.60 0.77 0.95 0.86 1.18 1.43 v reverse current v r = 10 0 v v r = 10 0 v, t c = +125 c i r 0.010 5.0 ma junction capacitance v r = 5 v f = 1 mhz v sig = 50 mv (p - p) c j 275 pf * p ulse test: pulse width 300 sec, d uty cycle 2% . downloaded from: http:///
t4 - lds - 0130, rev . 2 ( 6/ 14 /13 ) ?201 3 microsemi corporation page 4 of 6 1N6843CCU3 graphs t c (c) (case) figure 1 temperature - current derating curve (for each leg) notes: 1. all devices are capable of operating at t j specified on this curve. any parallel line to this curve will intersect the appropriate current for the desired maximum t j allowed. 2. derate design curve constrained by the maximum junction temperature (t j 150 c) and current rating specified. (see maximu m ratings .) 3. derate design curve chosen at t j 125 c, where the maximum temperature of electrical test is performed. 4. derate design curves chosen at t j , 125 c, and 110 c to show current rating where most users want to limit t j in their appli cation. average rectified output current i o rating (a) downloaded from: http:///
t4 - lds - 0130, rev . 2 ( 6/ 14 /13 ) ?201 3 microsemi corporation page 5 of 6 1N6843CCU3 graphs (continued) t1, rectangular pulse duration (sec) figure 2 thermal impedance (for each leg) thermal impedance C z ? jc ( c/w) downloaded from: http:///
t4 - lds - 0130, rev . 2 ( 6/ 14 /13 ) ?201 3 microsemi corporation page 6 of 6 1N6843CCU3 package dimensions no tes: 1. dimensions are in inche s. 2. millimeters are given for information onl y. 3. in accordance w ith asme y14.5m, diameters are equivalent to x sy mbolog y. schematic sy mbol dimensions inch millimeters min max min max bl 0 .395 0 .405 10.03 10.29 bw 0 .291 0 .301 7.39 7.65 ch 0 .1 12 0 .124 2. 84 3.15 lh 0 .010 0 .020 0.25 0.51 ll1 0 .220 0 .230 5.59 5.84 ll2 0 .115 0 .125 2.92 3.18 ls1 0 .150 bsc 3.81 bsc ls2 0 .075 bsc 1.91 bsc lw1 0 .281 0 .291 7.14 7.39 lw2 0 .090 0 .100 2.29 2.54 q1 0 .030 0.76 q2 0 .030 0.76 term 1 common cathode term 2 anode (see schematic) term 3 anode (see schematic ) downloaded from: http:///
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