ssf1010 100v n-channel mosfet www.goodark.com page 1 of 7 rev.2.2 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 100 i d @ tc = 100c continuous drain current, v gs @ 10v 70 i dm pulsed drain current 400 a power dissipation 205 w p d @tc = 25c linear derating factor 1.3 w/c v ds drain-source voltage 100 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=1.28mh 576 mj i as avalanche current @ l=1.28mh 30 a t j t stg operating junction and storage temperature range -55 to + 175 c v dss 100v r ds (on) 9.5mohm(typ.) i d 100a to-220 marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
ssf1010 100v n-channel mosfet www.goodark.com page 2 of 7 rev.2.2 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.73 c /w junction-to-ambient (t 10s) 62 c /w r ja junction-to-ambient (pcb mounted, steady-state) 40 c /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 v v gs = 0v, id = 250a 9.5 10 v gs =10v,i d = 30a r ds(on) static drain-to-source on-resistance 17.8 m t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.52 v t j = 125c 1 v ds = 100v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 120 q gs gate-to-source charge 24 q gd gate-to-drain("miller") charge 45 nc i d = 30a, v ds =30v, v gs = 10v t d(on) turn-on delay time 39 t r rise time 67 t d(off) turn-off delay time 221 t f fall time 79 ns v gs =10v, vds=30v, r l =15, r gen =2.5 id=2a c iss input capacitance 5688 c oss output capacitance 312 c rss reverse transfer capacitance 287 pf v gs = 0v v ds = 25v ? =1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 100 a i sm pulsed source current (body diode) 400 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.85 1.3 v i s =60a, v gs =0v t rr reverse recovery time 51 ns q rr reverse recovery charge 135 nc t j = 25c, i f =75a, di/dt = 100a/s
ssf1010 100v n-channel mosfet www.goodark.com page 3 of 7 rev.2.2 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the maximum current rating is limited by bond-wires.
ssf1010 100v n-channel mosfet www.goodark.com page 4 of 7 rev.2.2 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
ssf1010 100v n-channel mosfet www.goodark.com page 5 of 7 rev.2.2 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
ssf1010 100v n-channel mosfet www.goodark.com page 6 of 7 rev.2.2 mechanical data min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ? 1 - 7 0 - - 7 0 - ? 2 - 7 0 - - 7 0 - ? 3 - 3 0 - 5 0 7 0 9 0 ? 4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to-220 package outline dimension_gn e d d1 p a ? 1 d2 a1 c e b b1 ? 2 ? l ? 4 p1 e
ssf1010 100v n-channel mosfet www.goodark.com page 7 of 7 rev.2.2 ordering and marking information device marking: ssf1010 package (available) to-220 operating temperature range c : -55 to 175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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