SSF1016A 100v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 75 i d @ tc = 100c continuous drain current, v gs @ 10v 65 i dm pulsed drain current 300 a power dissipation 273 w p d @tc = 25c linear derating factor 1.8 w/c v ds drain-source voltage 100 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 153 mj i as avalanche current @ l=0.3mh 32 a t j t stg operating junction and storage temperature range -55 to + 175 c v dss 100v r ds (on) 13.8mohm(typ.) i d 75a d2pak marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF1016A 100v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.55 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 v v gs = 0v,i d = 250a 13.8 16 v gs =10v,i d = 30a r ds(on) static drain-to-source on-resistance 28.8 m t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.3 v t j = 125c 1 v ds = 100v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 92 q gs gate-to-source charge 21 q gd gate-to-drain("miller") charge 31 nc i d = 50a, v ds =35v, v gs = 10v t d(on) turn-on delay time 17 t r rise time 14 t d(off) turn-off delay time 53 t f fall time 12 ns v gs =10v, vds=30v, r l =15, r gen =2.5 id=2.0a c iss input capacitance 4415 c oss output capacitance 60 c rss reverse transfer capacitance 30 pf v gs =10v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 75 a i sm pulsed source current (body diode) 300 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.85 1.3 v i s =30a, v gs =0v t rr reverse recovery time 47 ns q rr reverse recovery charge 116 nc t j = 25c, i f =35a, di/dt = 100a/s
SSF1016A 100v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. repetitive rating; pulse width limited by max junction temperature. the power dissipation pd is based on max junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c.
SSF1016A 100v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
SSF1016A 100v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSF1016A 100v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min max min max a 9.660 10.280 0.380 0.405 b 1.020 1.320 0.040 0.052 c 8.590 9.400 0.338 0.370 d1 1.140 1.400 0.045 0.055 d2 0.700 0.950 0.028 0.037 d3 e 15.090 15.390 0.594 0.606 f 1.150 1.400 0.045 0.055 g 4.300 4.700 0.169 0.185 h 2.290 2.790 0.090 0.110 i k 1.300 1.600 0.051 0.063 a1 0.450 0.650 0.018 0.026 a2 0 0 8 0 1 0 8 0 symbol dimension in millimeters dimension in inches 5.080 (typ) 0.250 (typ) 0.010 (typ) 0.200 (typ) d2pak package outline dimension
SSF1016A 100v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: SSF1016A package (available) d2pak operating temperature range c : -55 to 175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box d2pak 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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