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| inchange semiconductor product specification silicon npn power transistors 2SC4140 description ? with to-3pn package ? high voltage ? high speed switching applications ? for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current 18 a i cp collector current-pulse 36 a i b base current 6 a p c collector power dissipation t c =25 ?? 130 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC4140 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ; i b =0 400 v v cesat collector-emitter saturation voltage i c =10a; i b =2a 0.5 v v besat base-emitter saturation voltage i c =10a; i b =2a 1.3 v i cbo collector cut-off current v cb =500v ;i e =0 100 | a i ebo emitter cut-off current v eb =10v; i c =0 100 | a h fe dc current gain i c =10a ; v ce =4v 10 30 f t transition frequency i e =-2a ; v ce =12v 10 mhz c ob collector output capacitance f=1mhz ; v cb =10v 165 pf switching times t on turn-on time 1.0 | s t stg storage time 3.0 | s t f fall time i c =10a;i b1 =1a; i b2 =-2a;r l =20 |? v cc =200v 0.5 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC4140 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC4140 |
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