? auirf7304q v dss -20v r ds(on) max. 0.090 ?? i d -4.3a description specifically designed for au tomotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. features ? advanced planar technology ? low on-resistance ? dual p channel mosfet ? dynamic dv/dt rating ? logic level ? 150c operating temperature ? fast switching ? lead-free, rohs compliant ? automotive qualified * 1 2015-11-16 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.7 a ? i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.3 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.4 i dm pulsed drain current ? -17 p d @t a = 25c maximum power dissipation ? 2.0 w linear derating factor 0.016 v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j operating junction and -55 to + 150 c ? t stg storage temperature range w/c absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units c/w r ? ja junction-to-ambient ? ??? 62.5 so-8 auirf7304q base part number package type standard pack orderable part number form quantity auirf7304q so-8 tape and reel 4000 AUIRF7304QTR g d s gate drain source hexfet ? power mosfet d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7
? auirf7304q 2 2015-11-16 notes: ? ? repetitive rati ng; pulse width limited by max. j unction temperature. (see fig. 11) ?? i sd ?? -2.2a, di/dt ?? 50a/s, v dd ?? v (br)dss , t j ? 150c. ? pulse width ?? 300s; duty cycle ? 2%. ? when mounted on 1 inch square copper board , t ????? sec. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.012 ??? v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.090 ???? v gs = -4.5v, i d = -2.2a ? ??? ??? 0.140 v gs = -2.7v, i d = -1.8a ? v gs(th) gate threshold voltage -0.70 ??? -1.5 v v ds = v gs , i d = -250a gfs forward trans conductance 4.0 ??? ??? s v ds = -16v, i d = -2.2a i dss drain-to-source leakage current ??? ??? -1.0 a v ds = - 16v, v gs = 0v ??? ??? -25 v ds = -16v,v gs = 0v,t j =125c i gss gate-to-source forwar d leakage ??? ??? -100 na v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? ??? 22 nc ? i d = -2.2a q gs gate-to-source charge ??? ??? 3.3 v ds = -16v q gd gate-to-drain charge ??? ??? 9.0 v gs = -4.5v, see fig.6 & 12 ? t d(on) turn-on delay time ??? 8.4 ??? ns ? v dd = -10v t r rise time ??? 26 ??? i d = -2.2a t d(off) turn-off delay time ??? 51 ??? r g = 6.0 ?? t f fall time ??? 33 ??? r d = 4.5 ???? see fig.10 ? l d internal drain inductance ??? 4.0 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 6.0 ??? from package and center of die contact c iss input capacitance ??? 610 ??? pf ? v gs = 0v c oss output capacitance ??? 310 ??? v ds = -15v c rss reverse transfer capacitance ??? 170 ??? ? = 1.0mhz, see fig.5 diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? -2.5 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -17 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.0 v t j = 25c,i s = -1.8a,v gs = 0v ?? t rr reverse recovery time ??? 56 84 ns t j = 25c ,i f = -2.2a, q rr reverse recovery charge ??? 71 110 nc di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? auirf7304q 3 2015-11-16 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -3.6a d v = -4.5v gs
? auirf7304q 4 2015-11-16 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-drain diode forward voltage 0 500 1000 1500 110100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 g gs a for test circuit see figure 12 -v , gate-to-source voltage (v) q , total gate charge (nc) i = -2.2a v = -16v d ds 0.1 1 10 100 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 1ms 10ms
? auirf7304q 5 2015-11-16 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10a. switching time test circuit 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temper atur e ( c) -i , drain current (a) c d fig 10b. switching time waveforms 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? auirf7304q 6 2015-11-16 fig 12a. basic gate charge waveform fig 12b. gate charge test circuit fig 13. peak diode recovery dv/dt test circuit for p-channel hexfet? power mosfets
? auirf7304q 7 2015-11-16 ? note: for the most current drawing please refer to ir website at http://www.irf.com/package/ so-8 part marking information so-8 package outline (dimensions are shown in millimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters in c h es min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. n o tes: 1. d im en sio n in g & to leran c in g per asm e y14.5m -1994. 2. controlling dim ension: millimeter 3. dimensions are shown in millimeters [inches]. 5 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. 6 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. m o ld pro tru sio n s n o t to exc eed 0.25 [.010]. 7 d im en sio n is th e len g th o f lead fo r so ld erin g to a s u b s t r a t e . m o ld pro tru sio n s n o t to exc eed 0.15 [.006]. 8x 1.78 [.070]
? auirf7304q 8 2015-11-16 so-8 tape and reel ( dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? auirf7304q 9 2015-11-16 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level so-8 msl1 esd machine model class m1b (+/- 100v) ? aec-q101-002 human body model ? class h0 (+/- 250v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 11/16/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ? highest passing voltage.
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