absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 17 i d @ v gs = 10v, t c = 100c continuous drain current 11 i dm pulsed drain current ? 68 p d @ t c = 25c max. power dissipation 35 w linear derating factor 0.28 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ? 56 mj i ar avalanche current ? 11 a e ar repetitive avalanche energy ? 3.5 mj dv/dt p eak diode recovery dv/dt ? 4.3 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 (for 5 s) weight 2.6 g fifth generation hexfet ? power mosfets from international rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. o c a logic level irl5nj024 hexfet ? power mosfet surface mount (smd-0.5) 7/13/01 www.irf.com 1 55v, n-channel smd-0.5 product summary part number bv dss r ds(on) i d irl5nj024 55v 0.06 17a features: logic level gate drive low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed surface mount light weight for footnotes refer to the last page pd - 93955a downloaded from: http:///
irl5nj024 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case 3.57 c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 17 i sm pulse source current (body diode) ? 68 v sd diode forward voltage 1.3 v t j = 25c, i s = 11a, v gs = 0v ? t rr reverse recovery time 90 ns t j = 25c, i f = 11a, di/dt 100a/ s q rr reverse recovery charge 200 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.057 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.060 v gs = 10v, i d = 11a CCC CCC 0.075 v gs = 5.0v, i d = 11a CCC CCC 0.105 v gs = 4.0v, i d = 9.0a v gs(th) gate threshold voltage 1.0 CCC 2.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.5 CCC CCC s v ds = 25v, i d = 11 a CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 na v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC CCC 15 i d = 11a q gs gate-to-source charge CCC CCC 3.7 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 8.5 v gs = 5.0v t d(on) turn-on delay time CCC CCC 11 v dd = 28v t r rise time CCC CCC 133 ns i d = 11a t d(off) turn-off delay time CCC CCC 35 r g = 12 t f fall time CCC CCC 66 v gs = 5.0v l s + l d total inductance CCC 4.0 CCC nh measured from the center of drain pad to center of source pad c iss input capacitanc CCC 514 CCC v gs = 0v, v ds = 25v electrical characteristics @ t j = 25c (unless otherwise specified) i gss r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current c rss reverse transfer capacitance CCC 51 CCC c oss output capacitance CCC 137 CCC pf ? = 1.0mhz downloaded from: http:///
www.irf.com 3 irl5nj024 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 17a 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 7.0v 5.0v 4.5v 2.7v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 7.0v 5.0v 4.5v 2.7v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 0.1 1 10 100 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 25v downloaded from: http:///
irl5nj024 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 200 400 600 800 1000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 24 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 11a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 150 c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 1 00s downloaded from: http:///
www.irf.com 5 irl5nj024 fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d v gs 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
irl5nj024 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 5.0v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v . 25 50 75 100 125 150 0 20 40 60 80 100 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.0a 7.0a 11a v gs downloaded from: http:///
www.irf.com 7 irl5nj024 footnotes: case outline and dimensions smd-0.5 pad assignments repetitive rating; pulse width limited bymaximum junction temperature. i sd 11a, di/dt 230 a/ s, v dd 55v, t j 150 c pulse width 300 s; duty cycle 2% v dd = 25 v, starting t j = 25 c, l=0.9mh peak i as =11a, v gs = 5.0 v, r g = 25 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/01 downloaded from: http:///
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