j. c x s.iils.u , li ne. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 irf430-433/irf830-83 3 mtm/mtp4n45/4n5 0 n-channe l powe r mosfets , 4. 5 a , 45 0 v/50 0 v descriptio n thes e device s ar e n-channel , enhancemen t mode , powe r mosfet s designe d especiall y fo r hig h voltage , hig h spae d applications , suc h a s off-lin e switchin g powe r supplies , ups , a c an d d c moto r controls , rela y an d solenoi d drivers . ? v g s rate d a t 2 0 v ? silico n gat e fo r fas t switchin g speed s ? idss . v d s(on) , so a an d v qs (ih ) specifie d a t elevate d temperatur e ? rugge d maximu m rating s to-220a b irf43 0 irf43 1 irf43 2 irf43 3 mtm4n4 5 mtm4n5 0 irf83 0 irf83 1 irf83 2 irf83 3 mtp4n4 s mtp4n5 0 symbo l v d s s vdg r vg s tj , t slf l t l characteristi c drai n t o sourc e voltag e drai n t o gat e voltag e r q s = 2 0 kf l gat e t o sourc e voltag e operatin g junctio n an d storag e temperatur e maximu m lea d temperatur e fo r solderin g purposes , 1/8 ' fro m cas e fo r 5 s ratin g irf430/43 2 irf830/b3 2 mtm/mtp4n5 0 50 0 50 0 2 0 -5 5 t o +15 0 27 5 ratin g irf431/43 3 irf831/83 3 mtm/mtp4n4 s 45 0 45 0 2 0 -5 5 t o +150 27 5 uni t v v v ? c ? c maximu m on-stat e characteristic s r ds(on ) i d stati c drain-to-sourc e o n resistanc e drai n curren t continuou s pulse d irf430/43 1 irf830/83 1 1. 5 4. 5 1 8 irf432/43 3 irf832/83 3 2. 0 4. 0 1 6 mtm/mtp4n4 5 mtm/mtp4n4 5 1. 5 4. 0 1 0 n a maximu m therma l characteristic s rsj c rsj a p d therma l resistance , junctio n t o cas e therma l resistance , junctio n t o ambien t tota l powe r dissipatio n a t t c - 25 c 1.6 7 6 0 7 5 1.6 7 6 0 7 5 1.6 7 6 0 7 5 "c/w c/ w w n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press , however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
irf430-433/irf830-83 3 electrica l characteristic s (t c = 25 c unles s otherwis e noted ) symbo l characteristi c wi n ma x uni t tes t condition s of f characteristic s v (br)ds s bs s les s drai n sourc e breakdow n voltage 1 irf430/432/830/83 2 irr31/433/831/83 3 zer o gat e voltag e drai n curren t gate-bod y leakag e curren t irf430-43 3 irf830-83 3 50 0 45 0 25 0 100 0 10 0 50 0 v ua m n a vg s - 0 v , b = 25 0 /u a vp s = rate d v ds s , v g s = 0 v vd s = 0. 8 x rate d v dss , vqs- o v , t c =125 c vgs - 2 0 v . v d s = 0 v o n characteristic s vosph ) rds(on ) ai s gat e threshol d voltag e stati c drain-sourc e on-resistanoe 2 irf430/431/830/83 1 irf432/433/832/83 3 forwar d transconductanc e 2. 0 2. s 4. 0 1. 5 2. 0 v n s ftj) b = 25 0 |ua , v d s = vg s vq s =1 0 v , i d = 2. 5 a vd s = 1 0 v , i d = 2. 5 a dynami c characteristic s c is s gos s gis s inpu t capacitanc e outpu t capacitanc e revers e transfe r capacitanc e 80 0 20 0 6 0 p f p f p f v d s = 2 5 v , v q s - 0 v f - 1. 0 mh z switchin g characteristic s (t c = 25' 1 c , figure s 12 . 13 ) td(on ) t r td(oh ) t | g symbo l turn-o n dela y tim e ris e tim e turn-of f dela y tim e fal l tim e tota l gat e charg e 3 0 3 0 5 5 3 0 3 0 n s n s n s n s n c vq d = 22 5 v , i d - 2. 5 a vgs = 1 0 v , r ge n = 1 5 h r g s = 1 5 fl vgs - 1 0 v , i d = 7. 0 a v d s = 18 0 v characteristi c ty p ma x uni t tes t condition s source-drai n diod e characteristic s vs d t, , diod e forwar d voltag e irf430/431/830/83 1 irf432/433/832/83 3 revers e recover y tim e 60 0 1. 4 1, 3 vv n s l s = 4. 5 a ; vg s - 0 v l s = 4. 0 a ; v g s - 0 v l s = 4. 5 a ; dl s /dt= - 10 0 a/jj s note s 1 - tj=+a5 c t o +1eo- c 2 . puls o las t puls e widt h < 6 0 (is . dut y cycl e < 1 % downloaded from: http:///
mtm/mtp4n45/4n5 0 electrica l characteristic s (t c = 25 c unles s otherwis e noted ) symbo l characteristi c ml n ma x uni t tes t condition s of f characteristic s v (br)ds s los s igs s drai n sourc e breakdow n voltage 1 mtm/mtp4n5 0 mtm/mtp4n4 5 zer o gat e voltag e drai n curren t gate-bod y leakag e curren t 50 0 45 0 0.2 5 2. 5 50 0 v m a m a n a vg s - 0 v , b - 5 - 0 m a v o s = 0.8 5 x rate d v dss , vg s - 0 v v d s - 0.8 5 x rate d vqss . vqs^ o v . t c =100 c vg s = 2 0 v , v d s = 0 v o n characteristic s vas(ih ) r ds(on ) vds(on ) 9l s gat e threshol d voltag e stati c drain-sourc e on-resistance 2 drain-sourc e on-voltage 2 forwar d transconductanc e 2. 0 1. 5 2. 0 4. 5 4. 0 1. 5 3. 0 7, 0 6. 0 v v n v v v s (u ) i d "1. 0 ma , v d s = vg s i d =1. 0 ma , v d s = v gs , t c = 100 c v es = 1 0 v , i 0 = 2. 0 a vq s -1 0 v , i d = 2, 0 v vqs-1 0 v , i d = 4. 0 a vg s =1 0 v , i d -4. 0 a t c -100? c vd s =1 0 v , i d = 2. 0 a dynami c characteristic s q 8 3 c os s qs s inpu t capacitanc e outpu t capacitanc e revers e transfe r capacitanc e 120 0 30 0 8 0 p f p f p f v d s = 2 5 v , vg s = 0 v f=1. 0 mh z switchin g characteristic s (t c = 25c , figure s 12 , 13) 3 tdton ) t , td(oll ) t f q 9 turn-o n dela y tim e ris e tim e turn-of f dela y tim e fal l tim e tota l gat e charg e 5 0 10 0 20 0 10 0 6 0 n s n s n s n s n c vd d = 2 5 v , i d = 2. 0 a vg s =1 0 v , rgen-s o ? rg s = 5 0 s 7 vg s -1 0 v , i d = 7. 0 a vd d =18 0 v mote s 1 . tj-+25' c t o +150- c 2 . puls e les t puls e widt h < s o ps , dul y cycl e <1 % 3 . switchin g tim e measurement s performe d o n le m tr-5 8 tes t equipment . downloaded from: http:///
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