050-5506 rev c maximum ratings all ratings: t c = 25 c unless otherwise specified. unit volts amps volts watts w/ c c amps mj static electrical characteristics unit volts amps ohms a na volts min typ max 100 75 0.019 250 1000 100 24 apt10m19svr 100 75 300 30 40 370 2.96 -55 to 150 300 7530 1500 apt10m19svr 100v 75a 0.019 characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 5 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 5 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25 c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 5 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) 5 g d s d 3 pak power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? 100% avalanche tested ? lower leakage ? surface mount d 3 pak package power mos v ? caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com downloaded from: http:///
dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = 0.5 i d[cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 1.6 min typ max 5100 6120 1900 2660 800 1200 200 300 40 60 92 180 16 32 40 40 50 75 20 40 unit pf nc ns apt10m19svr characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time 050-5506 rev c source-drain diode ratings and characteristics unit amps volts ns c min typ max 75 300 1.3 200 1.4 thermal characteristics symbol r jc r ja min typ max 0.34 40 unit c/w characteristicjunction to case junction to ambient z jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.40.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 symbol i s i sm v sd t rr q rr 1 repetitive rating: pulse width limited by maximum t j 4 starting t j = +25 c, l = 0.53mh, r g = 25 , peak i l = 75a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 the maximum current is limited by lead temperature. 3 see mil-std-750 method 3471apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 5 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/ s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/ s) 5 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) apt10m19svr 050-5506 rev c 01 02 03 04 05 0 012345 02468 05 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 200160 120 8040 0 2.001.80 1.60 1.40 1.20 1.00 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 200160 120 8040 0 125100 7550 25 0 8060 40 20 0 2.001.75 1.50 1.25 1.00 0.75 0.50 v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle v gs =9v, 10v & 15v 6v normalized to v gs = 10v @ 0.5 i d [cont.] t j = +25 c t j = -55 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c 7v 5.5v 4.5v 5v 8v 6v 5.5v 4.5v 5v 8v v gs =20v v gs =10v 6.5v v gs =15v 10v 6.5v 9v 7v downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt10m19svr 050-5506 rev c t c =+25 c t j =+150 c single pulse 300100 5010 51 2016 12 84 0 operation here limited by r ds (on) c rss c oss c iss 100 s 10ms100ms dc 1ms t j =+150 c t j =+25 c c oss c iss 1 5 10 50 100 .01 .1 1 10 50 0 50 100 150 200 250 300 350 0 0.4 0.8 1.2 1.6 2.0 15,00010,000 5,0001,000 500200 100 5010 51 apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.95 (.628) 16.05 (.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528) 13.51 (.532) revised8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline v ds =80v i d = 0.5 i d [cont.] v ds =20v v ds =50v downloaded from: http:///
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