analog power AM4500C n & p-channel 150-v (d-s) mosfet v ds (v) i d (a) 2.3 2.2 -1.7 -1.6 symbol nch limit pch limit units v ds 150 -150 v gs 20 20 t a =25c 2.3 -1.7 t a =70c 1.8 -1.3 i dm 9 -7 i s 2.5 -2.3 a t a =25c 2.1 2.1 t a =70c 1.3 1.3 t j , t stg c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature -150 500 @ v gs = -10v 530 @ v gs = -4.5v product summary 150 maximum junction-to-ambient a steady state r ja a w c/w parameter thermal resistance ratings continuous drain current a i d power dissipation a p d pulsed drain current b continuous source current (diode conduction) a operating junction and storage temperature range t <= 10 sec parameter drain-source voltage gate-source voltage absolute maximum ratings (t a = 25c unless otherwise noted) 255 @ v gs = 10v 290 @ v gs = 4.5v r ds(on) (m) -55 to 150 v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits so - 8 ? preliminary 1 publication order number: ds_AM4500C_1a
analog power AM4500C parameter symbol test conditions min typ max unit v ds = v gs , i d = 250 ua (nch) 1 v v ds = v gs , i d = -250 ua (pch) -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 120 v, v gs = 0 v (nch) 1 v ds = -120 v, v gs = 0 v (pch) -1 v ds = 5 v, v gs = 10 v (nch) 3.5 a v ds = -5 v, v gs = -10 v (pch) -2.5 a v gs = 10 v, i d = 2.1 a (nch) 255 v gs = 4.5 v, i d = 1.7 a (nch) 290 v gs = -10 v, i d = -1.4 a (pch) 500 v gs = -4.5 v, i d = -1 a (pch) 530 v ds = 15 v, i d = 2.1 a (nch) 11 s v ds = -15 v, i d = -1.4 a (pch) 11 s i s = 1.3 a, v gs = 0 v (nch) 0.76 v i s = 1.2 a, v gs = 0 v (pch) 0.75 v total gate charge q g 10 gate-source charge q gs 4.0 gate-drain charge q gd 4.7 total gate charge q g 6 gate-source charge q gs 2.0 gate-drain charge q gd 2.9 turn-on delay time t d(on) 7 rise time t r 7 turn-off delay time t d(off) 47 fall time t f 20 turn-on delay time t d(on) 8 rise time t r 7 turn-off delay time t d(off) 96 fall time t f 79 input capacitance c iss 1016 output capacitance c oss 83 reverse transfer capacitance c rss 40 input capacitance c iss 1008 output capacitance c oss 100 reverse transfer capacitance c rss 61 static electrical characteristics forward transconductance a g fs drain-source on-resistance a on-state drain current a gate-source threshold voltage zero gate voltage drain current diode forward voltage a dynamic b nc n - channel v ds = 75 v, v gs = 4.5 v, i d = 2.1 a ua m m p - channel v ds = -15 v, v gs = 0 v, f = 1 mhz pf v gs(th) i d(on) i dss r ds(on) v sd nc ns ns pf p - channel v ds = -75 v, v gs = -4.5 v, i d = -1.4 a n - channel v dd = 75 v, r l = 35.7 , i d = 2.1 a, v gen = 10 v, r gen = 6 p - channel v dd = -75 v, r l = 53.6 , i d = -1.4 a, v gen = -10 v, r gen = 6 n - channel v ds = 15 v, v gs = 0 v, f = 1 mhz ? preliminary 2 publication order number: ds_AM4500C_1a
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