2007. 4. 17 1/5 semiconductor technical data KMB7D1DP30QA dual p-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment and load switch. features h v dss =-30v, i d =-7.1a h drain-source on resistance r ds(on) =25m ? (max.) @ v gs =-10v r ds(on) =41m ? (max.) @ v gs =-4.5v h super hige dense cell design maximum rating (ta=25 ? ) flp-8 0.20+0.1/-0.05 p t 1.27 u 0.1 max millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 gh l d a b1 dim 6.02 0.31.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t u note : surface mounted on fr4 board, t ? 10sec. pin connection (top view) 12 3 4 87 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 12 3 4 87 6 5 characteristic symbol p-ch unit drain-source voltage v dss -30 v gate-source voltage v gss ? 20 v drain current dc@t a =25 ? i d -7.1 a dc@t a =70 ? -5.7 pulsed i dp -40 drain-source-diode forward current i s -1.7 a drain power dissipation t a =25 ? p d 1.1 w t a =70 ? 0.7 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient r thja 110 ? /w kmb7d1dp 30qa 705 downloaded from: http:///
2007. 4. 17 2/5 KMB7D1DP30QA revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =-10 a, v gs =0v, -30 - - v drain cut-off current i dss v gs =0v, v ds =-30v - - -1 a v gs =0v, v ds =-30v, tj=55 ? - - -25 gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =-250 a -1 - -3 v drain-source on resistance r ds(on) * v gs =-10v, i d =-7.1a - 20 25 m ? v gs =-4.5v, i d =-5.5a - 33 41 forward transconductance g fs * v ds =-10v, i d =-7.1a - 20 - s dynamic input capaclitance c iss v ds =15v, f=1mhz, v gs =ov - 1550 - pf ouput capacitance c oss - 420 - reverse transfer capacitance c rss - 380 - total gate charge q g * v ds =-15v, v gs =-10v, i d =-7.1a - 33 50 nc gate-source charge q gs * - 5.4 - gate-drain charge q gd * - 8.9 - turn-on delay time t d(on) * v dd =-15v, v gs =-10v i d =-1a, r g =6 ? - 9 15 ns turn-on rise time t r * - 12 20 turn-off delay time t d(off) * - 60 90 turn-off fall time t f * - 34 50 source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i dr =-1.7a - -0.8 -1.2 v * : pulse test : pulse width <300 k , duty cycle < 2% downloaded from: http:///
2007. 4. 17 3/5 KMB7D1DP30QA revision no : 0 0.4 4 10v 4.5v 3.0v 2.5v 4.0v 3.5v drain - current i d (a) 0 0 4 100 200 81 21 62 0 gate-source volatage v gs (v) 0 01 10 20 4030 2345 normalized drain- source on-resistance r ds(on) (m ) 0 30 5010 20 40 -25 150 50 75 100 125 25 -50 0 -75 common sourcev ds =10v, i d =7a pulse test common sourcev ds =5v pulse test c common sourcetc=25 pulse test junction temperature tj ( ) c -75 -50 -25 0 50 100 75 125 150 25 0 1 42 53 junction temperature tj ( ) c common sourcev gs =v ds i d =250 a pulse test gate threshold voltage v th (v) source - drain forward voltage v sdf (v) drain current i d (a) 0.6 1.0 0 0.2 1.4 1.8 0 2 10 84 6 fig1. v ds - i d drain current i d (a) drain - source voltage v ds (v) drain current i d (a) drain source on resistance r ds(on) ( ) fig2. r ds(on) - i d fig3. v gs - i d fig4. r ds(on) - t j fig5. v th - t j fig6. i s -v sdf -55 c 25 c v gs =4.5v v gs =10v 125 c v gs =2.0v downloaded from: http:///
2007. 4. 17 4/5 KMB7D1DP30QA revision no : 0 drain current i d (a) drain - source voltage v ds (v) 100 0.1 1 10 0.01 1 0.1 100 10 fig8. safe operation area v gs = 10v single pulset a = 25 c r ds(on) limit dc 10s 1s 100ms 10ms 1ms 100us time t (sec) 10 -3 10 -1 10 0 10 10 2 300 10 -2 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 fig7. transient thermal response curve normalized effective transient ther mac resistance 0.1 0.01 0.02 0.05 d = 0.5 0.2 single - duty = t/t t 1 t 2 p dm downloaded from: http:///
2007. 4. 17 5/5 KMB7D1DP30QA revision no : 0 fig9. gate charge circuit and wave form i d i d v ds v gs v gs 1.0 ma 0.5 v dss schottkydiode -4.5v q g q gd q gs q fig10. resistive load switching v ds v gs 0.5 v dss -10 v 6 rl v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off downloaded from: http:///
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