january2009.version1.0 magnachipsemiconductorltd . 1 mds9651Ccomplementarynpchanneltrenchmosfet absolutemaximumratings(t a =25 o cunlessotherwisenoted) rating characteristics symbol nch pch unit drainsourcevoltage v dss 30 30 v gatesourcevoltage v gss 20 20 v t a =25 o c 6.9 6.0 a continuousdraincurrent t a =100 o c i d 4.3 4.1 a pulseddraincurrent i dm 30 30 a t a =25 o c 2 2 powerdissipation (1) t a =100 o c p d 0.8 0.8 w singlepulseavalancheenergy (2) e as 18 60.5 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics device symbol rating unit thermalresistance,junctiontoambient(steadystat e) (1) nch r ja 62.5 thermalresistance,junctiontocase nch r jc 60 thermalresistance,junctiontoambient(steadystat e) (1) pch r ja 62.5 thermalresistance,junctiontocase pch r jc 40 o c/w 1(s1) 2(g1) 3(s2) 4(g2) 6(d2) 7(d1) mds9651 complementarynpchanneltrenchmosfet generaldescription the mds9651 uses advanced magnachips mosfet technology to provide low onstate resistance,highswitchingperformanceandexcellen t reliability features nchannel pchannel v ds =30v v ds =30v i d =6.9a @v gs =10v i d =6.0a@v gs =10v r ds(on) r ds(on) <28m @v gs =10v <35m @v gs =10v <42m @v gs =4.5v <55m @v gs =4.5v applications inverters generalpurposeapplications d1 g1 s1 d2 g2 s2 5(d2) 8(d1)
january2009.version1.0 magnachipsemiconductorltd . 2 mds9651Ccomplementarynpchanneltrenchmosfet orderinginformation partnumber temp.range package packing rohsstatus MDS9651URH 55~150 o c soic8 tape&reel halogenfree nchannelelectricalcharacteristics(t a =25 o cunlessotherwisenoted) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.0 1.9 3.0 v draincutoffcurrent i dss v ds =24v,v gs =0v 1.0 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 a v gs =10v,i d =6.9a 21.5 28.0 drainsourceonresistance r ds(on) v gs =4.5v,i d =5.0a 31.5 42.0 m forwardtransconductance g fs v ds =5v,i d =6.9a 15.4 s dynamiccharacteristics totalgatecharge q g 6.94 gatesourcecharge q gs 1.54 gatedraincharge q gd v ds =15v,i d =6.9a, v gs =10v 1.96 nc inputcapacitance c iss 334 reversetransfercapacitance c rss 48 outputcapacitance c oss v ds =15v,v gs =0v, f=1.0mhz 83 pf turnondelaytime t d(on) 3.5 turnonrisetime t r 25.4 turnoffdelaytime t d(off) 14.2 turnofffalltime t f v gs =10v,v ds =15v, r l =2.2,r gen =3 10.5 ns drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =1a,v gs =0v 0.75 1.0 v bodydiodereverserecoverytime t rr 16.5 ns bodydiodereverserecoverycharge q rr i f =6.9a,di/dt=100a/s 7.8 nc note: 1.surfacemountedfr4boardwith2oz.copper. 2.startingtj=25c,l=1mh,ias=6a,vdd=15v, vgs=10v
january2009.version1.0 magnachipsemiconductorltd . 3 mds9651Ccomplementarynpchanneltrenchmosfet pchannelelectricalcharacteristics(t a =25 o cunlessotherwisenoted) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.0 1.9 3.0 v draincutoffcurrent i dss v ds =24v,v gs =0v 1.0 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 a v gs =10v,i d =6.0a 30.5 35.0 drainsourceonresistance r ds(on) v gs =4.5v,i d =5.0a 41.5 55.0 m forwardtransconductance g fs v ds =5v,i d =6.0a 13 s dynamiccharacteristics totalgatecharge q g 18.4 gatesourcecharge q gs 3.1 gatedraincharge q gd v ds =15v,i d =6.0a, v gs =10v 3.6 nc inputcapacitance c iss 874 reversetransfercapacitance c rss 103 outputcapacitance c oss v ds =15v,v gs =0v, f=1.0mhz 166 pf turnondelaytime t d(on) 9.8 turnonrisetime t r 29.8 turnoffdelaytime t d(off) 26.3 turnofffalltime t f v gs =10v,v ds =15v, r l =2.7,r gen =3 8.6 ns drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =1a,v gs =0v 0.75 1.0 v bodydiodereverserecoverytime t rr 20 ns bodydiodereverserecoverycharge q rr i f =6.0a,di/dt=100a/s 12.3 nc note: 1.surfacemountedrf4boardwith2oz.copper. 2.startingtj=25c,l=1mh,ias=11a,vdd=1 5v,vgs=10v
january2009.version1.0 magnachipsemiconductorltd . 4 mds9651Ccomplementarynpchanneltrenchmosfet nchanneltypicalelectricalandthermalcharacteri stics fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltag e variation with source current and temperature 0 1 2 3 4 5 0 5 10 15 20 25 30 10v 6.0v 5.0v 4.5v 4.0v 3.5v vgs=3v i d (a) v ds (volts) 2 4 6 8 10 10 20 30 40 50 60 70 t a =25 t a =125 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0 1 2 3 4 5 0 5 10 15 20 125 25 i d (a) v gs (volts) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 25 125 i s [a] v sd [v] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =4.5v v gs =10v notes: 1.v gs =10v 2.i d =6.9a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0 5 10 15 20 10 20 30 40 50 60 v gs =4.5v v gs =10v r ds(on) [m ] i d [a] *note;vds=5v
january2009.version1.0 magnachipsemiconductorltd . 5 mds9651Ccomplementarynpchanneltrenchmosfet fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9 maximum safe operating area fig.1 0 maximumdraincurrent vs.casetemperature fig.1 1 transientthermalresponse curve 0 10 20 30 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 2 4 6 8 0 2 4 6 8 10 note:i d =6.9a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 i d ,draincurrent[a] t a ,casetemperature[ ] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 100 u s 1s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse r ja =62.5 /w t a =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 0.01 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z ja *r ja (t)+t a r ja =62.5 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 z ja (t), normalizedthermalresponse t 1 ,rectangularpulseduration[sec]
january2009.version1.0 magnachipsemiconductorltd . 6 mds9651Ccomplementarynpchanneltrenchmosfet pchanneltypicalelectricalandthermalcharacteri stics fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on res istancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 0.4 0.6 0.8 1.0 0.1 1 10 25 125 i s [a] v sd [v] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =10v v gs =4.5v notes: 1.v gs =10v 2.i d =6.5a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0 5 10 15 20 10 20 30 40 50 60 v gs =4.5v v gs =10v r ds(on) [m ] i d [a] 3 4 5 6 7 8 9 10 10 20 30 40 50 60 t a =25 t a =125 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0 1 2 3 4 5 0 5 10 15 20 25 30 10.0v 6.0v 5.0v 4.5v 4.0v 3.5v 3.0v i d [a] v ds [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 *notes; 1. v ds =5v 125 25 i d [a] v gs [v]
january2009.version1.0 magnachipsemiconductorltd . 7 mds9651Ccomplementarynpchanneltrenchmosfet fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10 maximum drain current vs. casetemperature fig.11transientthermalresponsecurve 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 100 u s 1s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse r ja =62.5 /w t a =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 i d ,draincurrent[a] t a ,ambienttemperature[ ] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 0.01 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z ja *r ja (t)+t a r ja =62.5 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 z ja (t), normalizedthermalresponse t 1 ,rectangularpulseduration[sec] 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 note:i d =6.5a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc]
january2009.version1.0 magnachipsemiconductorltd . 8 mds9651Ccomplementarynpchanneltrenchmosfet physicaldimensions 8leadssoic dimensionsareinmillimetersunlessotherwisespec ified
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