View STF42N60M2-EP_8930501.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

january 2015 docid027376 rev 1 1/16 STF42N60M2-EP, stfw42n60m2-ep n-channel 600 v, 0.076 ? typ., 34 a mdmesh? m2 ep power mosfets in to-220fp and to-3pf packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? very low turn-off switching losses ? 100% avalanche tested ? zener-protected applications ? switching applications ? tailored for very high frequency converters (f > 150 khz) description these devices are n-channel power mosfets developed using mdmesh? m2 ep enhanced performance technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. ' * 6 am01476v1 to-220fp to-3pf 1 2 3 order codes v ds @ t jmax r ds(on) max i d STF42N60M2-EP 650 v 0.087 ? 34 a stfw42n60m2-ep table 1. device summary order codes marking package packaging STF42N60M2-EP 42n60m2ep to-220fp tube stfw42n60m2-ep to-3pf www.st.com
contents STF42N60M2-EP, stfw42n60m2-ep 2/16 docid027376 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 to-220fp, STF42N60M2-EP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-3pf, stfw42n60m2-ep . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid027376 rev 1 3/16 STF42N60M2-EP, stfw42n60m2-ep electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp to-3pf v gs gate-source voltage 25 v i d (1) 1. limited by maximum junction temperature drain current (continuous) at t c = 25 c 34 a i d (1) drain current (continuous) at t c = 100 c 22 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 136 a p tot total dissipation at t c = 25 c 40 63 w dv/dt (3) 3. i sd 34 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 3500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220fp to-3pf r thj-case thermal resistance junction-case max 3.13 2.00 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 6a e as single pulse avalanche energy (starting t j =25c,i d =i ar ;v dd =50v) 800 mj
electrical characteristics STF42N60M2-EP, stfw42n60m2-ep 4/16 docid027376 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs =0v, i d =1ma 600 v i dss zero gate voltage drain current v gs =0v, v ds =600v 1 a v gs =0v, v ds =600v, t c =125c 100 a i gss gate-body leakage current v ds =0v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 17 a 0.076 0.087 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz - 2370 - pf c oss output capacitance - 112 - pf c rss reverse transfer capacitance -2.5-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 454 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 4.5 - q g total gate charge v dd = 480 v, i d = 34 a, v gs = 10 v (see figure 18 ) -55-nc q gs gate-source charge - 8.5 - nc q gd gate-drain charge - 25 - nc table 7. switching energy symbol parameter test conditions min. typ. max. unit r (off) turn-off energy (from 90% v gs to 0% i d ) v dd =400v, i d = 2.5 a, r g =4.7 , v gs =10v -13-j v dd =400v, i d = 5 a, r g =4.7 , v gs =10v -14.5-j
docid027376 rev 1 5/16 STF42N60M2-EP, stfw42n60m2-ep electrical characteristics 16 table 8. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =300v, i d =17a, r g =4.7 , v gs =10v (see figure 17 and figure 22 ) - 16.5 - ns t r rise time - 9.5 - ns t d(off) turn-off-delay time - 96.5 - ns t f fall time - 8 - ns table 9. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 34 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 136 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 34 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 34 a, di/dt = 100 a/s v dd = 60 v (see figure 22 ) - 438 ns q rr reverse recovery charge - 9 c i rrm reverse recovery current - 41.5 a t rr reverse recovery time i sd = 34 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) - 538 ns q rr reverse recovery charge - 12 c i rrm reverse recovery current - 44.5 a
electrical characteristics STF42N60M2-EP, stfw42n60m2-ep 6/16 docid027376 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp , ' $ 9 '6 9 ?v ?v pv pv 2shudwlrqlqwklvduhdlv olplwhge\pd[5'6rq 7 m ?& 7 f ?& 6lqjohsxovh *,3*$/6 . w s v = wk . 5 wk-f / w s w s / 6lqjohsxovh *& figure 4. safe operating area for to-3pf figure 5. thermal impedance for to-3pf , ' $ 9 '6 9 ?v ?v pv pv 2shudwlrqlqwklvduhdlv olplwhge\pd[5'6rq 7 m ?& 7 f ?& 6lqjohsxovh *,3*$/6 = wk . 5 wkmf / w s w s . w s v / 6lqjohsxovh =wk72sixp6 figure 6. output characteristics figure 7. transfer characteristics , ' $ 9 *6 9 9 *6 9 9 *6 9 9 *6 9 9 '6 9 *,3*$/6 , ' $ 9 *6 9 9 '6 9 *,3*$/6
docid027376 rev 1 7/16 STF42N60M2-EP, stfw42n60m2-ep electrical characteristics 16 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. turn-off switching loss vs drain current figure 11. capacitance variations figure 12. output capacitance stored energy figure 13. normalized gate threshold voltage vs temperature 9 '' 9 , ' $ 9 '6 9 *6 9 9 '6 9 4 j q& *,3*$/6 5 '6rq , ' $ 9 *6 9 *,3*$/6 ( rii ?- , ' $ *,3*$/6 & lvv & rvv i 0k] & uvv & si 9 '6 9 *,3*$/6 ( ?- 9 '6 9 *,3*$/6 9 *6wk qrup 7 - ?& , ' ?$ *,3*$/6
electrical characteristics STF42N60M2-EP, stfw42n60m2-ep 8/16 docid027376 rev 1 figure 14. normalized on-resistance vs temperature figure 15. normalized v (br)dss vs temperature figure 16. source-drain diode forward vs temperature 9 *6 9 5 '6rq qrup 7 - ?& *,3*$/6 9 %5'66 qrup , ' p$ 7 - ?& *,3*$/6 9 6' 9 7 - ?& 7 - ?& 7 - ?& , 6' $ *,3*$/6
docid027376 rev 1 9/16 STF42N60M2-EP, stfw42n60m2-ep test circuits 16 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STF42N60M2-EP, stfw42n60m2-ep 10/16 docid027376 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid027376 rev 1 11/16 STF42N60M2-EP, stfw42n60m2-ep package mechanical data 16 4.1 to-220fp, STF42N60M2-EP figure 23. to-220fp drawing 7012510_rev_k_b
package mechanical data STF42N60M2-EP, stfw42n60m2-ep 12/16 docid027376 rev 1 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid027376 rev 1 13/16 STF42N60M2-EP, stfw42n60m2-ep package mechanical data 16 4.2 to-3pf, stfw42n60m2-ep figure 24. to-3pf drawing 7627132_d
package mechanical data STF42N60M2-EP, stfw42n60m2-ep 14/16 docid027376 rev 1 table 11. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
docid027376 rev 1 15/16 STF42N60M2-EP, stfw42n60m2-ep revision history 16 5 revision history table 12. document revision history date revision changes 21-jan-2015 1 first release.
STF42N60M2-EP, stfw42n60m2-ep 16/16 docid027376 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

▲Up To Search▲

Price & Availability of STF42N60M2-EP

	To Download STF42N60M2-EP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .