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0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 2SK1195 transfer characteristics v ds = 10v pulse test typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a]
static drain-source on-state resistance 0.1 1 10 -50 0 50 100 150 2SK1195 v gs = 10v pulse test typ i d = 1.5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ]
gate threshold voltage 0 1 2 3 4 5 -50 0 50 100 150 2SK1195 v ds = 10v i d = 0.2ma typ case temperature tc [ c] gate threshold voltage v th [v]
safe operating area 0.01 0.1 1 1 10 100 2SK1195 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc 230 3 drain-source voltage v ds [v] drain current i d [a] r ds(on) limit
0.1 1 10 2SK1195 10 -4 10 -3 10 -2 10 -1 10 0 transient thermal impedance time t [s] transient thermal impedance q jc(t) [ c/w]
capacitance 1 10 100 1000 0 50 100 150 200 2SK1195 0.005 tc=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf]
0 20 40 60 80 100 0 50 100 150 2SK1195 power derating power derating [%] case temperature tc [ c]
0 50 100 150 200 250 0 2 4 6 8 10 2SK1195 0 5 10 15 20 100v gate charge characteristics i d = 1.5a v dd = 200v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v]

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