MMBTSC2712 npn silicon epitaxial planar transistor for audio frequency general purpos e amplifier applications. the transistor is subdivided into four groups o, y, g and l, according to its dc current gain. features ? high voltage and high current: v ceo =50v, i c =150ma(max) ? high h fe : h fe =70~700 ? low noise: nf=1db(typ.), 10db(max) ? small package absolute maximum ratings (t a = 25 o c) symbol value unit collector base voltage v cbo 60 v collector emitter voltage v ceo 50 v emitter base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma power dissipation p tot 200 mw junction temperature t j 125 o c storage temperature range t s -55 to +125 o c sot-23 plastic package
MMBTSC2712 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =6v, i c =2ma o y g l h fe h fe h fe h fe 70 120 200 350 - - - - 140 240 400 700 - - - - collector cutoff current at v cb =60v i cbo - - 0.1 a emitter cutoff current at v eb =5v i ebo - - 0.1 a collector saturation voltage at i c =100ma, i b =10ma v ce(sat) - - 0.25 v transition frequency at v ce =10v, i c =1ma f t 80 - - mhz collector output capacitance at v cb =10v, f=1mhz c ob - 2 3.5 pf noise figure at v ce =6v, i c =0.1ma, f=1khz, rg=10k ? nf - 1 10 db
MMBTSC2712 250 common emitter ta=25 c 2 0 i c - m a 80 160 6.0 7 6 4 v ce - v 0.5 ib=0.2ma 0 3.0 5.0 1.0 2.0 75 ta ( c ) 50 25 0 c o l l e c t o r p o w e r d i s s i p a t i o n , m w 100 50 200 150 125 100 240 i c - v ce p c - t a 1 0 0.1 100 1000 f t ( m h z ) common emitter ta=25 c v ce =10v i c , ma 10 100 f t - i c common emitter vce=1v vce=6v 0 100 h f e 10 1 0.1 i c, ma ta=100 c -25 25 3000 1000 hfe - i c 100 0.1 300100 0.01 v c e ( s a t ) , v 0.1 10 1 i c, ma ta=100 c -25 25 300 common emitter ic/ib=10 3 1 vce(sat) - i c common emitter ic/ib=10 ta=25 c 10 1 0.1 v b e ( s a t ) , v 0.1 1 i c, ma 10 30 v be(sat) - i c 100 300 i b - v be v be , v 1 0.3 0 0.4 common emitter vce=6v 100 i b , a 10 3000 1000 ta=100 c 1.2 0.8 -25 c 25 c
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