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inchange semiconductor product specification silicon npn power transistors 2SC3962 description ? ? with to-220c package ? high voltage ? high speed switching applications ? for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2 a p c collector dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC3962 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =2a; i b =0.4a 0.5 v v besat base-emitter saturation voltage i c =2a; i b =0.4a 1.3 v i cbo collector cut-off current v cb =500v ;i e =0 100 | a i ebo emitter cut-off current v eb =7v; i c =0 100 | a h fe dc current gain i c =0.5a ; v ce =5v 15 50
inchange semiconductor product specification 3 silicon npn power transistors 2SC3962 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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