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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3969 description low collector saturation voltage high colle ctor-emitter breakdown voltage- : v (br)ceo = 400v (min) high switching speed applications designed for switching regulator applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 2 a i cm collector current-peak 4 a collector power dissipation @ t c =25 20 p c collector power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3969 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 1.0a ; i b1 = 0.1a, l= 1mh 400 v v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 400 v v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 400 v v (br)ebo emitter-base breakdown voltage i e = 50 a; i c = 0 7 v v ce( sat ) collector-emitter saturation voltage i c = 1a; i b = 0.2a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 1a; i b = 0.2a b 1.5 v i cbo collector cutoff current v cb = 400v; i e = 0 10 a i ebo emitter cutoff current v eb = 7v; i c = 0 10 a h fe dc current gain i c = 0.1a ; v ce = 5v 25 50 f t current-gain?bandwidth product i e = -0.1a ; v ce = 10v 10 mhz c ob output capacitance i e = 0; v cb = 10v; f= 1.0mhz 30 pf switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c = 0.8a ; i b1 = -i b2 = 0.08a; r l = 250 ;v cc 200v 1.0 s isc website www.iscsemi.cn 2 |
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