advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 60v fast switching characteristic r ds(on) 90m simple drive requirement i d 2.7a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 100 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 1.25 -55 to 150 operating junction temperature range -55 to 150 drain current, v gs @ 10v 3 2.2 pulsed drain current 1 12 gate-source voltage + 20 drain current, v gs @ 10v 3 2.7 parameter rating drain-source voltage 60 201611221 1 AP6N090G halogen-free product ap6n090 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. g d s d g d s sot-89 .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =2.5a - - 90 m v gs =4.5v, i d =1.5a - - 120 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =3a - 9 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =3a - 10 16 nc q gs gate-source charge v ds =48v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 2 - nc t d(on) turn-on delay time v ds =30v - 5 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? -15- ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 420 672 pf c oss output capacitance v ds =30v - 35 - pf c rss reverse transfer capacitance f=1.0mhz - 25 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.3 v t rr reverse recovery time i s =3a, v gs =0 v , - 11 - ns q rr reverse recovery charge di/dt=100a/s - 6 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mount on fr4 board, t < 10s. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6N090G .
AP6N090G fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 2 4 6 8 10 12 02468 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t a = 150 o c 60 64 68 72 76 80 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =1.5a t a =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 2.5 a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =1ma .
AP6N090G fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm t t 0.02 duty factor = t/t peak t j = p dm x r thja + t a r thja =100 /w 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =48v 0 200 400 600 800 121416181 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 4 8 12 16 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c operation in this area limited by r ds(on) q v g 10v q gs q gd q g charge .
ap6n090 g fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 0.4 0.8 1.2 1.6 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma 0 100 200 300 400 500 036912 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v v gs =10v .
AP6N090G marking information 6 date code (ywws) y last digit of the year ww week s sequence part numbe r 6n090 ywws .
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