1. product profile 1.1 general description 350 w ldmos power transistor for s-band radar applications in the frequency range from 2.7 ghz to 2.9 ghz. 1.2 features and benefits ? high efficiency ? excellent ruggedness ? designed for s-band operation (2.7 ghz to 2.9 ghz) ? excellent thermal stability ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? s-band radar applications in the frequent range 2.7 ghz to 2.9 ghz bls7g2729l-350p; bls7g2729ls-350p ldmos s-band radar power transistor rev. 5 ? 16 may 2014 product data sheet table 1. typical performance typical rf performance at t case =25 ? c; t p = 300 ? s; ? = 10 %; i dq = 200 ma; in a class-ab production test circuit. test signal f v ds p l g p ? d t r t f (ghz) (v) (w) (db) (%) (ns) (ns) pulsed rf 2.7 to 2.9 32 350 13 50 8 5
bls7g2729l-350p_ls-350p all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014 . all rights reserved. product data sheet rev. 5 ? 16 may 2014 2 of 13 nxp semiconductors bls7g2729l(s)-350p ldmos s-band radar power transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol bls7g2729l-350p (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] bls7g2729ls-350p (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] v \ p v \ p table 3. ordering information type number package name description version bls7g2729l-350p - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a bls7g2729ls-350p - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +11 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
bls7g2729l-350p_ls-350p all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014 . all rights reserved. product data sheet rev. 5 ? 16 may 2014 3 of 13 nxp semiconductors bls7g2729l(s)-350p ldmos s-band radar power transistor 5. thermal characteristics 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit z th(j-mb) transient thermal impedance from junction to mounting base t case =85 ?c; p l = 350 w t p =100 ? s; ? = 10 % 0.07 k/w t p =200 ? s; ? = 10 % 0.09 k/w t p =300 ? s; ? = 10 % 0.10 k/w t p =100 ? s; ? = 20 % 0.09 k/w table 6. dc characteristics t j =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.2ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 220 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -39-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =11.0a - 16.2 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.7a - 0.065 - ? table 7. rf characteristics test signal: pulsed rf; t p = 300 ? s; ? = 10 %; rf performance at v ds =32v; i dq = 200 ma; t case =25 ? c; unless otherwise specified, in a class-ab production circuit. symbol parameter conditions min typ max unit g p power gain p l = 350 w 11 13 - db rl in input return loss p l = 350 w - ? 10 - db ? d drain efficiency p l = 350 w 46 50 - % p droop(pulse) pulse droop power p l = 350 w - 0 0.5 db t r rise time p l = 350 w - 8 50 ns t f fall time p l = 350 w - 5 50 ns
bls7g2729l-350p_ls-350p all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014 . all rights reserved. product data sheet rev. 5 ? 16 may 2014 4 of 13 nxp semiconductors bls7g2729l(s)-350p ldmos s-band radar power transistor 7. test information 7.1 ruggedness in class-ab operation the bls7g2729l-350p and bls7g2729ls-350p are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; i dq =200ma; p l =350w; t p = 300 ? s; ? = 10 %. 7.2 impedance information [1] impedances are taken at a single halve of the push-pull transistor table 8. typical impedance f z s [1] z l [1] ghz ? ? 2.7 2.8 ? j8.7 1.8 ? j5.1 2.8 3.9 ? j8.2 2.1 ? j5.4 2.9 4.8 ? j9.3 1.5 ? j5.7 fig 1. definition of transistor impedance d d n j d w h j d w h g u d l q g u d l q = 6 = /
bls7g2729l-350p_ls-350p all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014 . all rights reserved. product data sheet rev. 5 ? 16 may 2014 5 of 13 nxp semiconductors bls7g2729l(s)-350p ldmos s-band radar power transistor 7.3 test circuit information printed-circuit board (pcb): rogers ro6006; ? r = 6.45 f/m; thickness = 0.635 mm; thickness copper plating = 35 ? m. the vias can be used as a re ference to place components. the above layout shows the test circui t used to measure the devices in produ ction. a more appropriate application demonstration for specific cust omer needs can be provided. see table 9 for list of components. fig 2. component layout % / 6 * / 6 3 % / 6 * / 6 3 5 ( 9 5 ( 9 & |