vishay siliconix SI4101DY new product document number: 62828 s13-0110-rev. a, 21-jan-13 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com p-channel 30 v (d-s) mosfet features ? trenchfet ? power mosfet ?100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? adaptor switch, load switch ? power management ? notebook computers and portable battery packs notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. maximum under steady stat e conditions is 84 c/w. d. based on t c = 25 c. product summary v ds (v) r ds(on) ( ? ) max. i d (a) d q g (typ.) - 30 0.0060 at v gs = - 10 v - 25.7 65 nc 0.0080 at v gs = - 4.5 v - 22.3 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4101DY-t1-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 25.7 a t c = 70 c - 20.6 t a = 25 c - 18 a, b t a = 70 c - 14.4 a, b pulsed drain current (t = 300 s) i dm - 70 continuous source-drain diode current t c = 25 c i s - 5 t a = 25 c - 2.4 a, b avalanche current l = 0.1 mh i as - 30 single-pulse avalanche energy e as 45 mj maximum power dissipation t c = 25 c p d 6 w t c = 70 c 3.8 t a = 25 c 2.9 a, b t a = 70 c 1.9 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, c t ?? 10 s r thja 36 43 c/w maximum junction-to-foot steady state r thjf 16 21
vishay siliconix SI4101DY new product www.vishay.com 2 document number: 62828 s13-0110-rev. a, 21-jan-13 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 20 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 5.3 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on) v ds ? - 10 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 15 a 0.0050 0.0060 ? v gs = - 4.5 v, i d = - 10 a 0.0066 0.0080 forward transconductance a g fs v ds = - 10 v, i d = - 15 a 72 s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 8190 pf output capacitance c oss 772 reverse transfer capacitance c rss 715 total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 18 a 135 203 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 18 a 65 85 gate-source charge q gs 22.5 gate-drain charge q gd 17.6 gate resistance r g f = 1 mhz 0.4 2 4 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 1.5 ? i d ? - 10 a, v gen = - 10 v, r g = 1 ? 20 30 ns rise time t r 918 turn-off delaytime t d(off) 80 120 fall time t f 11 20 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 1.5 ? i d ? - 10 a, v gen = - 4.5 v, r g = 1 ? 72 108 rise time t r 60 90 turn-off delaytime t d(off) 60 90 fall time t f 23 35 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c - 5 a pulse diode forward current i sm - 70 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.78 - 1.2 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 29 45 ns body diode reverse recovery charge q rr 19 29 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 16
vishay siliconix SI4101DY new product document number: 62828 s13-0110-rev. a, 21-jan-13 www.vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 14 28 42 56 70 0 0.5 1 1.5 2 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.00300 0.00475 0.00650 0.00825 0.01000 0 14 28 42 56 70 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 30 60 90 120 150 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 8 v i d = 18 a v ds = 9.6 v v ds = 15 v transer characteristics capacitance on-resistance s. junction temperature 0 1 2 3 4 5 0 0.6 1.2 1.8 2.4 3 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 2100 4200 6300 8400 10500 0 6 12 18 24 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) v gs = 4.5 v, 10 a v gs = 10 v, 15 a
vishay siliconix SI4101DY new product www.vishay.com 4 document number: 62828 s13-0110-rev. a, 21-jan-13 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j - temperature ( c) i d = 250 a on-resistance s. gate-to-source voltage single pulse power, junction-to-ambient 0.002 0.005 0.008 0.011 0.014 2 4 6 8 10 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 15 a 0 30 10 20 po w er ( w ) time (s) 1 600 100 10 - 1 10 - 2 10 5 25 15 safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 ms limited by r ds(on) * 1 ms t a = 25 c bvdss limited 10 ms 100 s 10 s dc 1 s
vishay siliconix SI4101DY new product document number: 62828 s13-0110-rev. a, 21-jan-13 www.vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 6 12 18 24 30 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) power derating, junction-to-foot 0 2 4 6 8 0 25 50 75 100 125 150 power (w) t c - case temperature ( c) power derating, junction-to-ambient 0 0.5 1 1.5 2 0 25 50 75 100 125 150 power (w) t a - ambient temperature ( c)
vishay siliconix SI4101DY new product www.vishay.com 6 document number: 62828 s13-0110-rev. a, 21-jan-13 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62828 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 70 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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