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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 14N05 features drain current i d = 14a@ t c =25 drain source voltage- : v dss = 50v(min) static drain-source on-resistance : r ds(on) = 0.1 (max) fast switching applications switch regulators switching converters motor drivers and relay drivers absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 50 v v gs gate-source voltage-continuous 10 v i d drain current-continuous 14 a p d total dissipation @t c =25 48 w t j max. operating junction temperature 150 t stg storage temperature -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 14N05 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =250 a 50 v v gs (th ) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v v sd diode forward on-voltage i s = 14a ;v gs = 0 1.5 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 14a 0.1 i gss gate-body leakage current v gs = 10v;v ds = 0 100 na i dss zero gate voltage drain current v ds =40v; v gs = 0 1 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 670 pf c rss reverse transfer capacitance 50 c oss output capacitance 185 t r rise time v gs =10v; r gs =0.6 i d =7a; v dd =25v; r l =3.57 24 ns t d(on) turn-on delay time 13 t f fall time 16 t d(off) turn-off delay time 42 pdf pdffactory pro www.fineprint.cn |
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