HL6503MG visible high power laser diode for dvd-ram ade-208-670d (z) 5th edition dec. 2000 description the HL6503MG is a 0.66 m m band algalnp laser diode (ld) with a multi-quantum well (mqw) structure. it is suitable as a light source for large capacity optical disc memories, such as dvd-ram, and various other types of optical equipment. hermetic sealing of the small package ( f 5.6 mm) assures high reliability. application optical disc memories optical equipment features high output power : 50 mw (cw) visible light output : l p = 664 nm typ small package : f 5.6 mm low astigmatism : 5 m m typ (p o = 5 mw) internal circuit ld 1 3 internal circuit package type HL6503MG: mg 2
HL6503MG 2 absolute maximum ratings (t c = 25 c) item symbol value unit optical output power p o 50 mw pulse optical output power p o (pulse) 70 * mw laser diode reverse voltage v r(ld) 2v operating temperature topr - 10 to +60 c storage temperature tstg - 40 to +85 c note: pulse condition : pulse width = 100 ns, duty = 50% optical and electrical characteristics (t c = 25 c) item symbol min typ max unit test conditions optical output power p o 50 mw kink free * pulse optical output power p o (pulse) 70 mw kink free * threshold current ith 30 45 60 ma operating current iop 115 135 ma p o = 50 mw operating voltage v op 2.1 2.6 3.0 v p o = 50 mw beam divergence parallel to the junction q // 7 8.5 11 deg. p o = 50 mw beam divergence parpendicular to the junction q^ 18 21 26 deg. p o = 50 mw asitgmatism a s ? m mp o = 5 mw, na = 0.55 lasing wavelength l p 655 664 667 nm p o = 50 mw note: kink free is confirmed at the temperature of 25 c.
HL6503MG 3 typical characteristic curves 0 200 160 120 80 40 50 40 30 optical output power, p o (mw) 20 10 0 forward current, i f (ma) optical output power vs. forward current slope efficiency, h s (mw/ma) case temperature, t c ( c) slope efficiency vs. case temperature 1.0 0.8 0.6 0.4 0.2 0 0 1020304050607080 t c = 60 c t c = 25 c t c = 0 c threshold current, ith (ma) case temperature, t c ( c) threshold current vs. case temperature 80 70 60 50 40 30 20 10 0 100 10 30 50 0 200 160 120 80 40 80 60 40 optical output power, p o (mw) 20 0 forward current, i f (ma) pulse optical output power vs. forward current t c = 60 c t c = 25 c t c = 0 c t c = 25 c pw = 100 ns duty = 50%
HL6503MG 4 typical characteristic curves (cont) lasing wavelength, l p (nm) case temperature, t c ( c) wavelength vs. case temperature 655 665 660 relative intensity wavelength, l p (nm) lasing spectrum t c = 25 c 0 10203040506070 80 675 670 665 660 655 650 p o = 50 mw p o = 50 mw p o = 35 mw p o = 10 mw p o = 5 mw relative intensity angle, q (deg.) far field pattern - 40 - 100 102030 - 20 - 30 40 1.0 0.8 0.6 0.4 0.2 0 p o = 50 mw t c = 25 c astigmatism, a s ( m m) optical output power, p o (mw) astigmatism vs. optical output power 050 40 30 20 10 10 6 4 2 0 t c = 25 c na = 0.55 8 perpendicular parallel
HL6503MG 5 typical characteristic curves (cont) gain (db) frequency (hz) frequency response 1m 100m 3g 10m 3 db/div 1g 0 1 100 80 60 survival rate (%) 40 20 0 applied voltage (kv) electrostatic destruction (mil standard) forward n = 5 pcs d iop 10% 2 3 p o = 3 mw
HL6503MG 6 package dimensions hitachi code jedec eiaj mass (reference value) ld/mg 0.3 g unit: mm 1 2 3 5.6 +0 ?.025 f 1.0 0.1 (0.4) (90 ) 1.6 0.2 f 0.4 +0.1 ? f f 4.1 0.3 3.55 0.1 0.25 glass 1.27 f 3 ? 0.45 0.1 6.5 1.0 1.2 0.1 2.3 0.2 f 1 2 3 2.0 0.2 emitting point
HL6503MG 7 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent.
HL6503MG 8 hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
|
