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mosfet metaloxidesemiconductorfieldeffecttransistor optimos tm optimos ? 5power-transistor,100v IPB027N10N5 datasheet rev.2.1 final powermanagement&multimarket
2 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet d2pak 1description features ?idealforhighfrequencyswitchingandsync.rec. ?excellentgatechargex r ds(on) product(fom) ?verylowon-resistancer ds(on) ?n-channel,normallevel ?100%avalanchetested ?pb-freeplating;rohscompliant ?qualifiedaccordingtojedec 1) fortargetapplications ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 100 v r ds(on),max 2.7 m w i d 120 a q oss 142 nc q g (0v..10v) 112 nc type/orderingcode package marking relatedlinks IPB027N10N5 pg-to 263-3 027n10n5 - 1) j-std20 and jesd22 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - 120 120 a t c =25c t c =100c pulsed drain current 1) i d,pulse - - 480 a t c =25c avalanche energy, single pulse 2) e as - - 461 mj i d =100a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - 250 w t c =25c operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - 0.4 0.6 k/w - thermal resistance, junction - ambient, minimal footprint r thja - - 62 k/w - thermal resistance, junction - ambient, 6 cm 2 cooling area 3) r thja - - 40 k/w - soldering temperature, wave and reflow soldering are allowed t sold - - 260 c reflow msl1 1) see figure 3 2) see figure 13 for more detailed information 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 100 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.2 3.0 3.8 v v ds = v gs , i d =184a zero gate voltage drain current i dss - - 0.1 10 5 100 a v ds =100v, v gs =0v, t j =25c v ds =100v, v gs =0v, t j =125c gate-source leakage current i gss - 1 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 2.4 2.8 2.7 3.5 m w v gs =10v, i d =100a v gs =6v, i d =50a gate resistance 1) r g - 1.2 1.8 w - transconductance g fs 102 204 - s | v ds |>2| i d | r ds(on)max , i d =100a table5dynamiccharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 7920 10300 pf v gs =0v, v ds =50v, f =1mhz output capacitance c oss - 1210 1570 pf v gs =0v, v ds =50v, f =1mhz reverse transfer capacitance c rss - 53 93 pf v gs =0v, v ds =50v, f =1mhz turn-on delay time t d(on) - 26 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.6 w rise time t r - 15 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.6 w turn-off delay time t d(off) - 52 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.6 w fall time t f - 17 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.6 w table6gatechargecharacteristics 2) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 37 - nc v dd =50v, i d =100a, v gs =0to10v gate to drain charge 1) q gd - 23 34 nc v dd =50v, i d =100a, v gs =0to10v switching charge q sw - 36 - nc v dd =50v, i d =100a, v gs =0to10v gate charge total 1) q g - 112 139 nc v dd =50v, i d =100a, v gs =0to10v gate plateau voltage v plateau - 4.6 - v v dd =50v, i d =100a, v gs =0to10v output charge 1) q oss - 142 189 nc v dd =50v, v gs =0v 1) defined by design. not subject to production test. 2) see 2 gate charge waveforms 2 for parameter definition d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continous forward current i s - - 120 a t c =25c diode pulse current i s,pulse - - 480 a t c =25c diode forward voltage v sd - 0.92 1.2 v v gs =0v, i f =100a, t j =25c reverse recovery time 1) t rr - 74 148 ns v r =50v, i f =100,d i f /d t =100a/s reverse recovery charge 1) q rr - 166 332 nc v r =50v, i f =100,d i f /d t =100a/s 1) defined by design. not subject to production test. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 50 100 150 200 0 50 100 150 200 250 300 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 50 100 150 200 0 20 40 60 80 100 120 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 1 2 3 4 5 0 40 80 120 160 200 240 280 320 360 400 440 480 7 v 10 v 6 v 5.5 v 5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 100 200 300 400 500 0 1 2 3 4 5 5 v 5.5 v 6 v 7 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 0 50 100 150 200 250 300 350 400 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 40 80 120 160 0 50 100 150 200 250 g fs =f( i d ); t j =25c d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0 1 2 3 4 5 6 7 max typ r ds(on) =f( t j ); i d =100a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1840 a 184 a v gs(th) =f( t j ); v gs = v ds ;parameter: i d diagram11:typ.capacitances v ds [v] c [pf] 0 20 40 60 80 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 25 c 175 c 25 c max 175 c max i f =f( v sd );parameter: t j d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet diagram13:avalanchecharacteristics t av [s] i as [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 25 c 100 c 150 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 40 80 120 0 2 4 6 8 10 20 v 50 v 80 v v gs =f( q gate ); i d =100apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 95 100 105 110 v br(dss) =f( t j ); i d =1ma d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
11 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet 6packageoutlines figure1outlinepg-to263-3,dimensionsinmm/inches d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
12 optimos a 5power-transistor ,100v IPB027N10N5 rev.2.1,2015-01-30 final data sheet revisionhistory IPB027N10N5 revision:2015-01-30,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2014-12-17 release of final version 2.1 2015-01-30 reduce active area by 0.7% welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms

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