rf characteristics ( watts output ) 2.5 general description silicon vdmos and ldmos transistors designed specifically for broadband rf applications. suitable for military radios, cellular and paging amplifier base stations, broadcast fm/am, mri, laser driver and others. patented gold metalized 2.5 watts single ended package style so8 high efficiency, linear, absolute maximum ratings (tc = 25 c) o total device junction to case thermal maximum junction storage temperature dc drain current drain to gate drain to source gate to source 10 watts 15 c o 200 -65 to 150 0.8 a 30v v v 70 70 electrical characteristics (each side) symbol parameter min typ max units test conditions symbol parameter min typ max units test conditions gps h vswr common source power gai drain efficiency load mismatch toleranc db % relative 10 45 0.2 20:1 idq = idq = idq = 0.2 0.2 a, a, a, 28.0 vds = v, 28.0 vds = v, 28.0 vds = v, f = 1000 mhz f = 1000 mhz f = 1000 mhz bvdss idss igss vgs gm rdson idsat ciss crss coss drain breakdown voltag zero bias drain curren gate leakage curren gate bias for drain curren forward transconductanc saturation resistanc saturation curren common source input capacitanc common source feedback capacitanc common source output capacitanc 65 0.2 1 7 1 0.2 3.5 1.2 9 1 6 mho ohm amp pf v v pf pf ma ua 0.01 ids = a, vgs = 0v 28.0 vds = v, vgs = 0v vds = 0 v, vgs = 30v 0.02 ids = a, vgs = vds vds = 10v, vgs = 5v vgs = 20v, ids = 1 vgs = 20v, vds = 10v 28.0 vds = v, vgs = 0v, f = 1 mhz a 28.0 vds = v, vgs = 0v, f = 1 mhz 28.0 vds = v, vgs = 0v, f = 1 mhz polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax:(805) 484-3393 email:sales@polyfet.com url:www.polyfet.com revision silicon gate enhancement mode rf power high gain, low noise "polyfet" process features gold metal for greatly extended lifetime. low output capacitance and high f enhance broadband performance t tm c o c o c/w o P281 polyfet rf devices dissipation resistance temperature voltage voltage voltage 8/1/97 vdmos transistor
P281 pout vs pin f=1000 mhz; idq=0.2a; vds=28v pin in watts 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 pout gain gain pout efficiency = 45% pout vs pin graph P281 f2a 1 die capacitance vs vds vds in volts 1 10 100 0 5 10 15 20 25 30 crss coss ciss f2a 1 die iv curve vds in volts 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20 vgs = 2v vgs = 4v vgs = 6v vgs = 8v vgs = 10v vgs 12v f2a 1 die gm & id vs vgs vgs in volts 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 gm id polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax:(805) 484-3393 email:sales@polyfet.com url:www.polyfet.com capacitance vs voltage iv curve id and gm vs vgs s11 and s22 smith chart package dimensions in inches revision 8/1/97
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