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| trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile pwm optimized for fast switching primary side switch for 24-v dc/dc applications secondary synchronous rectifier SI7850DP vishay siliconix new product document number: 71625 s-03828?rev. a, 28-may-01 www.vishay.com 1 n-channel 60-v (d-s) fast switching mosfet v ds (v) r ds(on) ( ) i d (a) 0.022 @ v gs = 10 v 10.3 60 0.031 @ v gs = 4.5 v 8.7 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view n-channel mosfet g d s parameter symbol 10 secs steady state unit drain-source voltage v ds 60 gate-source voltage v gs 20 v t a = 25 c 10.3 6.2 continuous drain current (t j = 150 c) a t a = 85 c i d 7.5 4.5 continuous source current i s 3.7 1.5 a pulsed drain current i dm 40 avalanche current b i as 15 single avalanche energy b e as 11 mj t a = 25 c 4.5 1.8 maximum power dissipation a t a = 85 c p d 2.3 0.9 w operating junction and storage temperature range t j , t stg ?55 to 150 c parameter symbol typical maximum unit t 10 sec 22 28 maximum junction-to-ambient a steady state r thja 58 70 c/w maximum junction-to-case (drain) steady state r thjc 2.6 3.3 c/w notes a. surface mounted on 1? x 1? fr4 board. b. guaranteed by design, not subject to production testing. SI7850DP vishay siliconix new product www.vishay.com 2 document number: 71625 s-03828 ? rev. a, 28-may-01 parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 55 c 20 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a a v gs = 10 v, i d = 10.3 a 0.018 0.022 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 8.7 a 0.025 0.031 forward transconductance a g fs v ds = 15 v, i d = 10.3 a 26 s diode forward voltage a v sd i s = 3.8 a, v gs = 0 v 0.85 1.2 v dynamic b total gate charge q g 18 27 gate-source charge q gs v ds = 30 v, v gs = 10 v, i d = 10.3 a 3.4 nc gate-drain charge q gd 5.3 gate-resistance r g 1.4 turn-on delay time t d(on) 10 20 rise time t r v = 30 v, r = 30 10 20 turn-off delay time t d(off) v dd = 30 v, r l = 30 i d 1 a, v gen = 10 v, r g = 6 25 50 ns fall time t f 12 24 source-drain reverse recovery time t rr i f = 3.8 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0 8 16 24 32 40 012345 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 thru 5 v 25 c t c = 150 c 4 v ? 55 c 3 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d SI7850DP vishay siliconix new product document number: 71625 s-03828 ? rev. a, 28-may-01 www.vishay.com 3 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 8 16 24 32 40 0 2 4 6 8 10 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ? 50 ? 25 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 0 102030405060 c rss c oss c iss v ds = 30 v i d = 10.3 a v gs = 10 v i d = 10.3 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 4.5 v 2.0 2.5 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 1 10 50 i d = 10.3 a 0.00 0.5 1.0 1.5 t j = 25 c t j = 150 c source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s SI7850DP vishay siliconix new product www.vishay.com 4 document number: 71625 s-03828 ? rev. a, 28-may-01 ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.01 0 1 100 40 60 10 600 0.1 single pulse power time (sec) 20 80 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 58 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 100 0.02 |
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