t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 1 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 available on commercial versions n- channel mosfet qualified per mil -prf- 19500/54 3 qualified levels : jan, jantx , and jantxv description this family of 2n6764 t1 , 2n676 6 t1, 2n676 8 t1 and 2n 67 70 t1 switching transistors are military qualified up to the jan txv level for high - reliability applications . these devices are also available in a thru hole to - 204ae metal can package . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various s witching speed requirements in both through - hole and surface - mount packages. to - 254aa package also available in : to - 204a e (to - 3) package ( leaded ) 2n67 64 & 2n 6 770 important: for the latest informat ion, visit our website http://www.microsemi.com . features ? jedec registered 2n 6764 , 2n6766, 2n6768 and 2n 67 70 number series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/54 3. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? l ow - profile design. ? military and other high - reliability applications. m axim um ratings @ t a = +25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com par ameters / test conditions symbol value unit junction & storage temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 0.83 o c/w total power dissipation @ t a = +25 c @ t c = +25 c (1) p t 4 150 w drain - source voltage, dc 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 v ds 100 200 400 500 v gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc (2) 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 i d1 38.0 30.0 14.0 12.0 a drain current, dc @ t c = +100 oc (2) 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 i d2 24.0 19.0 9.0 7.75 a off - state current (peak total value) (3) 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 i dm 152 120 56 48 a (pk) sou rce current 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 i s 38.0 30.0 14.0 12.0 a notes featured on next page. downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 2 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 notes: 1. derate linearly by 1.2 w/oc for t c > +25 oc . 2. the following formula derives the maximum theoretical i d limit. i d is limited by pack age and internal wires and may also be limited by pin diameter: 3. i dm = 4 x i d1 as calculated in note 2. mechanical and packaging ? case: nickel p lated, h ermetically sealed, to - 254aa . ? terminals: ni plated, c opper cored, k ovar. ? marking: manufactu rers id, p art n umber, d ate c ode, beo (beryllium oxide). ? w eight: 6.5 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n6764 t1 (e3) reliability level jan = jan level jantx = jantx level ja ntxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant to - 254aa pa ckage symbols & definitions symbol definition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 3 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character is tics drain - source breakdown voltage v gs = 0 v, i d = 1.0 ma 2n6764 t1 2n6766 t1 2n676 8 t1 2n6770 t1 v (br)dss 100 200 400 500 v gate - source voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125 c v ds v gs , i d = 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 200 na drain current v gs = 0 v, v ds = 80 v v gs = 0 v, v ds = 160 v v gs = 0 v, v ds = 320 v v gs = 0 v, v ds = 400 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 i dss1 25 a drain current v gs = 0 v, v ds = 100 v, t j = +125 c v gs = 0 v, v ds = 200 v, t j = +125 c v gs = 0 v, v ds = 400 v, t j = +125 c v gs = 0 v, v ds = 500 v, t j = +125 c 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 i dss2 1.0 ma drain current v gs = 0 v, v ds = 80 v, t j = +125 c v gs = 0 v, v ds = 160 v, t j = +125 c v gs = 0 v, v ds = 320 v, t j = +125 c v gs = 0 v, v ds = 400 v, t j = +125 c 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 i dss3 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 24.0 a pulsed v gs = 10 v, i d = 19.0 a pulsed v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 7.75 a pul sed 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 r ds(on)1 0.055 0.085 0.3 0.4 ? static drain - source on - state resistance v gs = 10 v, i d = 38.0 a pulsed v gs = 10 v, i d = 30.0 a pulsed v gs = 10 v, i d = 14.0 a pulsed v gs = 10 v, i d = 12.0 a pulsed 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 r ds(on)2 0.065 0.09 0.4 0.5 ? static drain - source on - state resistance t j = +125 c v gs = 10 v, i d = 24.0 a pulsed v gs = 10 v, i d = 19.0 a pulsed v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 7.75 a pulsed 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 r ds(on)3 0.094 0.153 0.66 0.88 ? diode forward voltage v gs = 0 v, i d = 38.0 a pulsed v gs = 0 v, i d = 30.0 a pulsed v gs = 0 v, i d = 14.0 a pulsed v gs = 0 v, i d = 12.0 a pulsed 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 v sd 1.9 1.9 1.7 1.7 v downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 4 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 38.0 a, v ds = 50 v v gs = 10 v, i d = 30.0 a, v ds = 10 0 v v gs = 10 v, i d = 14.0 a, v ds = 20 0 v v gs = 10 v, i d = 12.0 a, v ds = 2 50 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 q g(on) 125 115 110 120 nc gate to source charge v gs = 10 v, i d = 38.0 a, v ds = 50 v v gs = 1 0 v, i d = 30.0 a, v ds = 10 0 v v gs = 10 v, i d = 14.0 a, v ds = 20 0 v v gs = 10 v, i d = 12.0 a, v ds = 2 50 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 q gs 22 22 18 19 nc gate to drain charge v gs = 10 v, i d = 38.0 a, v ds = 50 v v gs = 10 v, i d = 30.0 a, v ds = 10 0 v v gs = 10 v, i d = 14.0 a, v ds = 20 0 v v gs = 10 v, i d = 12.0 a, v ds = 2 50 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 q gd 65 60 65 70 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 38.0 a , v gs = +10 v, r g = 2.35 ? , v dd = 50 v i d = 30.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 100 v i d = 14.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 200 v i d = 12.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 250 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 t d(on) 35 ns ri s e time i d = 38.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 50 v i d = 30.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 100 v i d = 14.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 200 v i d = 12.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 250 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 t r 190 ns turn - off delay time i d = 38.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 50 v i d = 30.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 100 v i d = 14.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 200 v i d = 12.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 250 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 t d(off) 170 ns fall time i d = 38.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 50 v i d = 30.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 100 v i d = 14.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 200 v i d = 12.0 a, v gs = +10 v, r g = 2.35 ? , v dd = 250 v 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 t f 130 ns diode reverse recovery time di/dt = 100 a/s, v dd 30 v, i d = 38.0 a di/dt = 100 a/s, v dd 30 v, i d = 30.0 a di/dt = 100 a/s, v dd 30 v, i d = 14.0 a di/dt = 100 a/s, v dd 30 v, i d = 12.0 a 2n6764 t1 2n6766 t1 2n6768 t1 2n6770 t1 t rr 500 950 1200 1600 ns downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 5 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 graphs t 1 , rectangle pulse duration (sec onds ) figure 1 thermal response curves thermal response (z t jc ) downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 6 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 graphs (continued) figure 2 C maximum d rain c urrent vs c ase t emperature g raphs t c case temperature (oc) t c case temperature (oc) for 2n6764t1 for 2n6766t1 t c case temperature (oc) t c case temperature (oc) for 2n6768t1 for 2n6770t1 i d drain current (amperes) i d drain current (amperes) i d, drain current (amperes) i d, drain current (amperes) downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 7 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 graphs (continued) figure 3 C maximum s afe o perating a rea v ds , drain - to - source voltage (volts) for 2n6764 t1 v ds , drain - to - source voltage (volts) f or 2n6766 t1 i d , drain current (amperes) i d , drain current (amperes) downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 8 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 graphs (continued) v ds , drain - to - source voltage (volts) for 2n6768 t1 v ds , drain - to - source voltage (volts) for 2n6770 t1 i d drain current (amperes) i d drain current (amperes) downloaded from: http:///
t4 - lds - 01 01-1, rev . 1 (12 1466 ) ?201 2 microsemi corporation page 9 of 9 2n67 64 t1 , 2n676 6 t1, 2n676 8 t1 and 2n67 70 t1 package dimensions notes: dimensions notes 1. dimensions are in inches. 2. millimeters are given for general information only. 3. protrusion thickness of ceramic eyelets included in dimension ll. 4. all t erminals are isolated from case. 5. in accordance with asme y14.5m, diameters are equivalent to x symbology. ltr inch millimet ers min max min max bl 0 .535 0 .545 13.59 13.84 ch 0 .249 0 .260 6.32 6.60 ld 0 .035 0 .045 0.89 1.14 ll 0 .510 0 .570 12.95 14.48 3,4 lo 0 .150 bsc 3.81 bsc ls 0 .150 bsc 3.81 bsc mhd 0 .139 0 .149 3.53 3.78 mho 0 .665 0 .685 16.89 17.4 0 tl 0 .790 0 .800 20.07 20.32 tt 0 .040 0 .050 1.02 1.27 tw 0 .535 0 .545 13.59 13.84 term 1 drain term 2 source term 3 gate downloaded from: http:///
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