to ? 92 1. collecto r 2. base 3. emitter jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors bc556 / bc557 / BC558 transistor (pnp) features z high voltage z complement to bc546,bc547,bc5 4 8 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit bc556 -80 bc557 -50 v cbo collector-base voltage BC558 -30 v bc556 -65 bc557 -45 v ceo collector-emitter voltage BC558 -30 v v ebo emitter-base voltage -5 v i c collector current-continuous -0.1 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 e , aug ,201 7 equivalent circuit solid dot=green molding compound device, z=rank of h fe ///, . bc 5 5 6 ,bc 5 5 7 ,bc 5 5 8 ,! - . if none,the normal device 1 bc 5 5 6 xxx 1 bc 5 5 7 xxx 1 bc 5 5 8 xxx z z z ordering inform a t ion part nu mb er pack ag e packin g meth o d pack qu an tity t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc 5 5 6 bc 5 5 6 -ta t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc 5 5 7 bc 5 5 7 -ta t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc 5 5 8 bc 5 5 8 -ta
www.cj-elec.com 0aug0 & a t =25 unless otherwise specified pa rameter symbol test conditions min typ max unit bc556 -80 bc557 -50 collector-b ase b reakdown voltage BC558 v (br)cbo i c = -0.1ma,i e =0 -30 v bc556 -65 bc557 -45 collector-emitter breakdow n v oltage BC558 v (br)ceo i c =-2ma,i b =0 -30 v emitter-base b reakdown voltage v (br)ebo i e =-100 a,i c =0 -5 v bc556 v cb =-70v,i e =0 -0.1 a bc557 v cb =-45v,i e =0 -0.1 a collector cu t-o ff current BC558 i cbo v cb =-25v,i e =0 -0.1 a bc556 v ce =-60v,i b =0 -0.1 a bc557 v ce =-40v,i b =0 -0.1 a collector cu t-o ff current BC558 i ceo v ce =-25v,i b =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current g a in h fe * v ce =-5v, i c =-2m a 120 800 i c =-10ma,i b =-0.5m a -0.3 v collector-emitter satu r ation voltage v ce(sat) i c =-100ma,i b =-5ma -0 .65 v i c =-10ma,i b =-0.5m a -0.8 v base-emitter satu r ation voltage v be(sat) i c =-100ma,i b =-5ma -1 v v ce =-5v, i c =-2ma -0.55 -0.7 v base-emitter voltage v be v ce =-5v, i c =-10ma -0.82 v collector o u tput capacitance c ob v cb =-10v,i e =0, f=1m hz 6 pf bc556 150 mhz bc557 3 150 mhz tran s ition frequency BC558 f t v ce =-5v,i c =-10ma, f= 100mhz 150 mhz classifica tion of h fe rank a b c range 120- 220 180-460 420-800
min max min max a 3. 300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 3 e , aug,201 7
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