6-pack high power mosfet module 200 amperes/100 volts FM400TU-2A 1 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex mosfet modules are designed for use in low voltage switching applications. each module consists of 6 mosfet switches with low r ds(on) and a fast recovery body diode to yield low loss. all components and interconnects are isolated from the heat sink baseplate. this offers simplified system assembly and thermal management. features: low e sw(off) and low r ds(on) super-fast recovery free- wheel diode thermistor for t c sensing parallel legs to make a dual module at 3x the rating positive locking connectors easy bus bar layout due to flow through power design applications: forklift off road electric vehicle welder ups chopper ordering information: example: select the complete part module number you desire from the table below -i.e. FM400TU-2A is a 100v (v dss ), 200 ampere 6-pack high power mosfet module. type current rating v dss amperes volts fm 200 100 outline drawing and circuit diagram dimensions inches millimeters a 4.33 110.0 b 3.54 90.0 c 1.38 35.0 d 3.82 97.0 e 3.15 80.0 f 3.27 83.0 g 0.26 6.5 h 0.48 12.0 j 0.51 12.9 k 0.65 16.5 l 0.63 16.0 m 1.26 32.0 n 0.35 8.8 p 0.45 11.5 q 0.16 4.0 dimensions inches millimeters r 0.79 20.0 s 1.50 38.0 t 2.64 67.0 u 1.02 26.0 v 0.98 25.0 w 0.36 9.1 x dia. 0.25 dia. 6.5 y rad. 0.25 rad. 6.5 z 0.57 14.5 aa 0.55 14.0 ab 1.18 30.0 ac 0.69 17.5 ad 0.47 12.0 ae 0.61 15.5 af 0.18 4.5 (8) g v p (2) s v p (11) g v n (5) s v n (9) g w p (3) s w p (12) g w n (6) s w n (7) g u p (1) s u p (10) g u n (4) s u n v w (13) (14) p n u 14 th2 11 g vn 8 g vp 2 s vp 6 s wn 5 s vn 3 s wp 7 g up 9 g wp 10 g un 12 g wn 1 s up 4 s un 13 th1 terminal code 1 13 14 6 7 u v w n p 12 a d f m w ae ad aa aa z z z af l l k b e t q q c u v k m m x y p s r g g j h n x (11 places) t c measured point a b a housing type tyco electronics p/n a: 917354-1 b: 177898-1 b c u v ab ab ac z
FM400TU-2A 6-pack high power mosfet module 200 amperes/100 volts 2 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol FM400TU-2A units channel temperature t j C40 to 150 c storage temperature t stg C40 to 125 c drain-source voltage (g-s short) v dss 100 volts gate-source voltage (d-e short) v gss 20 volts drain current (t c = 25c) i d(rms) 200 a rms peak drain current (pulse) i dm 400* amperes avalanche current (l = 10h, pulse) i da 200* amperes source current (t c = 25c)** i s(rms) 200 a rms peak source current (pulse)** i sm 400* amperes maximum power dissipation (t c = 25c, t j < 150c)*** p d 650 watts maximum peak power dissipation (t c' = 25c, t j < 150c)*** p d 880 watts mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb weight 600 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts * pulse width and repetition rate should be such that device channel temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, source-to-drain free-wheel diode (fwdi). ***t c' measured point is just under the chips. if you use this value, r th(f-a) should be measured just under the chips.
FM400TU-2A 6-pack high power mosfet module 200 amperes/100 volts 3 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units drain-cutoff current i dss v ds = v dss , v gs = 0v 1.0 ma gate-source threshold voltage v gs(th) i d = 20ma, v ds = 10v 4.7 6.0 7.3 volts gate leakage current i gss v gs = v gss , v ds = 0v 0.5 a static drain-source on-state resistance r ds(on) i d = 200a, v gs = 15v, t j = 25c 1.45 2.0 m (chip) i d = 200a, v gs = 15v, t j = 125c 2.5 m static drain-source on-state voltage v ds(on) i d = 200a, v gs = 15v, t j = 25c 0.29 0.4 volts (chip) i d = 200a, v gs = 15v, t j = 125c 0.5 volts lead resistance r lead i d = 200a, terminal-chip, t j = 25c 0.8 m i d = 200a, terminal-chip, t j = 125c 1.12 m input capacitance c iss 75 nf output capacitance c oss v ds = 10v, v gs = 0v 10 nf reverse transfer capacitance c rss 6 nf total gate charge q g v dd = 48v, i d = 200a, v gs = 15v 1200 nc turn-on delay time t d(on) 400 ns rise time t r v dd = 48v, i d = 200a, 400 ns turn-off delay time t d(off) v gs1 = v gs2 = 15v, r g = 6.3, 450 ns fall time t f inductive load switching operation, 300 ns diode reverse recovery time** t rr i s = 200a 250 ns diode reverse recovery charge** q rr 6.0 c source-drain voltage v sd i s = 200a, v gs = 0v 1.3 volts * *represents characteristics of the anti-parallel, source-to-drain free-wheel diode (fwdi).
FM400TU-2A 6-pack high power mosfet module 200 amperes/100 volts 4 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, channel to case r th(j-c) mosfet part (1/6 module) 0.19 c/w t c reference point per outline drawing thermal resistance, channel to case r th(j-c') mosfet part (1/6 module) 0.142 c/w measured point is just under the chips. contact thermal resistance r th(c-f) per 1/6 module, thermal grease applied 0.1 c/w thermistors part characteristics symbol test conditions min. typ. max. units resistance* r th t c = 25c 100 k b constant* b resistance at 25c, 50c 4000 k *b = (inr 1 C inr 2 ) / (1/t 1 C 1/t 2 ) r 1 : resistance at t 1 (k), r 2 : resistance at t 2 (k)
FM400TU-2A 6-pack high power mosfet module 200 amperes/100 volts 5 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com source-drain voltage, v sd , volts) source current, i s , (amperes) free-wheel diode forward characteristics (typical - inverter part) 0 1.0 0.8 0.6 0.4 0.2 10 3 10 2 10 1 v gs = 0v t j = 25c t j = 125 o c gate-source voltage, v gs , (volts) drain-source on-state voltage, v ds(on) , (volts) drain-source on-state voltage vs. gate bias characteristics (typical ) 0 20 t j = 25c i d = 400a i d = 200a i d = 100a 15 10 5 5 15 13 9 7 11 drain-source voltage, v ds , (volts) drain current, i d , (amperes) output characteristics (typical) v gs = 20v 15 t j = 25c 12 10 9 gate-source, v gs , (volts) drain current, i d , (amperes) transfer characteristics (typical) v ds = 10v t j = 25c t j = 125 o c 300 100 0 200 400 200 100 300 0 400 1. 5 0.5 0 1. 0 2.0 0.5 0.9 1.0 0.8 0.7 0.6
FM400TU-2A 6-pack high power mosfet module 200 amperes/100 volts 6 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com drain-source voltage, v ds , (volts) capacitance, c ies , c oes , c rss , (nf) 10 -1 10 0 10 1 10 2 capacitance vs. drain-source voltage (typical) v gs = 0v c iss t rr i rr c oss c rss 10 2 10 1 10 0 source current, i s , (amperes) reverse recovery current, t rr , i rr , (ns) 10 1 10 2 10 3 reverse recovery characteristics (typical) v dd = 48v v gs = 15v r g = 6.3 t j = 25c inductive load 10 3 10 2 10 1 10 0 drain current, i d , (amperes) switching loss, e sw(on) , e sw(off) , e rr , (mj/pulse) 10 1 10 2 10 3 switching loss vs. drain current (typical) 10 1 10 0 10 -1 10 -2 v dd = 48v v gs = 15v r g = 6.3 t j = 125c inductive load gate resistance, r g , () switching loss, e sw(on) , e sw(off) , e rr , (mj/pulse) 0 10 20 30 40 50 60 70 switching loss vs. gate resistance (typical) 10 2 10 1 10 0 10 -1 10 -2 v dd = 48v v gs = 15v i d = 200a e sw(off) e sw(on) e rr e sw(off) e sw(on) e rr t j = 125c inductive load
FM400TU-2A 6-pack high power mosfet module 200 amperes/100 volts 7 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com t r 10 1 10 2 10 3 10 1 drain current, i d , (amperes) switching times, (ns) switching time vs. drain current (typical ) 10 2 10 3 v dd = 48v v gs = 15v r g = 6.3 t j = 125c inductive load gate charge, q g , (nc) gate-source voltage, v gs , (volts) gate charge characteristics (typical ) 0 1200 1800 1500 i d = 200a 900 600 300 15 5 0 10 20 channel temperature, t j , (c) gate-threshold voltage, v gs(th) , (volts) gate threshold voltage vs. temperature (typical ) 0 100 160 120 140 v gs = 10v i d = 20ma 80 60 40 20 6 5 2 1 0 4 3 7 t d(on) t d(off) t r t f v dd = 24v v dd = 48v 10 1 gate resistance, r g , () switching time, (ns) switching time vs. gate resistance (typical ) 10 2 10 3 10 4 0 10 20 30 40 50 60 70 t d(on) t d(off) t f v dd = 48v v gs = 15v i d = 200a t j = 125c inductive load
FM400TU-2A 6-pack high power mosfet module 200 amperes/100 volts 8 07/12 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 0 100 160 120 140 80 60 40 20 3.0 2.5 1. 0 0.5 0 2.0 1. 5 3.5 channel temperature, t j , (c) drain-source on-state resistance, r ds(on) , (m) drain-source on-state voltage vs. temperature (typical ) time, (s) transient thermal impedance characteristics (typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') single pulse t c = 25c i d = 200a v gs = 12v v gs = 15v
|
