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top view 8 12 3 4 5 6 7 d d d d g s a s s a so-8
hexfet power mosfet features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 IRF7809AVPBF-1 tape and reel 4000 irf7809avtrpbf-1 package type standard pack orderable part number IRF7809AVPBF-1 so-8 base part number parameter symbol irf7809a v units drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain or source t a = 25c i d 13.3 current (v gs 4.5v) t l = 90c 14.6 a pulsed drain current i dm 100 power dissipation t a = 25c p d 2.5 w t l = 90c 3.0 junction & storage temperature range t j , t stg C55 to 150 c continuous source current (body diode) i s 2.5 a pulsed source current i sm 50 absolute maximum ratings parameter max. units maximum junction-to-ambient r ja 50 c/w maximum junction-to-lead r jl 20 c/w thermal resistance

! device characteristics irf7809av r ds (on) 7.0m q g 41nc q sw 14nc q oss 30nc downloaded from: http:///

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parameter min typ max units conditions diode forward v sd 1.3 v i s = 15a , v gs = 0v voltage* reverse recovery q rr 120 nc di/dt ~ 700a/ s v ds = 16v, v gs = 0v, i s = 15a reverse recovery q rr(s) 150 nc di/dt = 700a/ s charge (with parallel (with 10bq040) schottky) v ds = 16v, v gs = 0v, i s = 15a parameter min ty p max units conditions drain-to-source bv dss 30 C C v v gs = 0v, i d = 250 a breakdown voltage static drain-source r ds (on) 7.0 9.0 m v gs = 4.5v, i d = 15a on resistance gate threshold voltage v gs(th) 1.0 v v ds = v gs ,i d = 250 a drain-source leakage i dss 30 v ds = 24v, v gs = 0 current* 150 av ds = 24v, v gs = 0, tj = 100c gate-source leakage i gss 100 na v gs = 12v current* total gate chg cont fet q g 41 62 v gs =5v, i d =15a, v ds =20v total gate chg sync fet q g 36 54 v gs = 5v, v ds < 100mv pre-vth q gs1 7.0 v ds = 20v, i d = 15a gate-source charge post-vth q gs2 2.3 nc gate-source charge gate to drain charge q gd 12 i d =15a, v ds =16v switch chg(q gs2 + q gd ) q sw 14 21 output charge* q oss 30 45 v ds = 16v, v gs = 0 gate resistance r g 1.5 3.0 turn-on delay time t d (on) 14 v dd = 16v, i d = 15a rise time t r 36 ns v gs = 5v turn-off delay time t d (off) 96 clamped inductive load fall time t f 10 input capacitance c iss C 3780 C output capacitance c oss C 1060 C pf v ds = 16v, v gs = 0 reverse transfer capacitance c rss C 130 C electrical characteristicssource-drain rating & characteristics currentcharge notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10 sec. typ = measured - q oss typical values measured at v gs = 4.5v, i f = 15a. downloaded from: http:///

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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 2.4 2.6 2.8 3.0 3.2 3.4 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 15a downloaded from: http:///

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fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 10 20 30 40 50 60 70 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 15a v = 20v ds downloaded from: http:///
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms #
1 0.1 % # $% # + - # 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
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fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 6.7a 9.5a 15a 0 20 40 60 80 100 120 i d , drain current (a) 0.005 0.006 0.007 0.008 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 4.5v 2.5 3.0 3.5 4.0 4.5 v gs, gate -to -source voltage (v) 0.006 0.008 0.010 0.012 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 15a downloaded from: http:///
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so-8 package outline (mosfet & fetky) e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: t his is an irf7101 (mosfet) f 7101 xxxx int ernational logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = we e k a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ downloaded from: http:///

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