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irsm505 - 015 irsm515 - 015 series 1 www.irf.com ? 2014 international rectifier november 24, 2014 6.0 ? , 50 0v integrated power module for small appliance motor drive applications description irsm505 - 015 and irsm515 - 015 are 3 - phase integrated power modules (ipm) designed for advanced appliance motor drive applications such as energy efficient fans a nd pumps. these advanced ipms offers a combination of low r ds(on) trench fredfet technology and the industry benchmark half - bridge high voltage, rugged driver in a familiar package. the modules are optimized for low emi characteristics. irsm505 - 015 include s temperature feedback while irsm515 - 015 does not. features ? 500v 3 - phase inverter including high voltage gate drivers ? integrated bootstrap functionality ? low 6.0? (max , 25c ) r ds(on) trench fredfet ? under - voltage lockout for all channels ? matched propagation delay for all channels ? tempe rature feedback via ntc ( irsm505 - 015 o nly) ? optimized dv/dt for loss and emi trade offs ? open - source for single and leg - shunt cur rent sensing ? 3.3v logic compatible with advanced input filter ? driver t olerant to negative transient voltage ( - vs) ? isolation 19 00v rms , 1min ? rohs compliant ? certified by ul - file number e252584 base part number ntc package type standard pack orderable part number form qu antity irsm505 - 015 yes sop 23 tube 240 irsm505 - 015 pa dip23 tube 240 irsm505 - 015 da dip23 a tube 24 0 irsm505 - 015 da 2 irsm515 - 015 no sop23 tube 24 0 irsm515 - 015 pa dip23 tube 24 0 irsm515 - 015 da dip23a tube 24 0 irsm515 - 015 da2
irsm505 - 015 irsm515 - 015 series 2 www.irf.com ? 2014 international rectifier november 24, 2014 internal electrical sc hematic irsm505 - 015 irsm515 - 015 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. these are not tested at manufacturin g. all voltage parameters are absolute voltages referenced to com unless otherwise stated in the table. symbol description min max unit bv dss mosfet blocking voltage --- 500 v i o @ t c =25c dc output current per mosfet --- 1. 2 a i op @ t c =25c pulsed output current per mosfet (note 1) --- 9 p d @ t c =25c maximum power dissipation per mosfet --- 18 w v iso isolation voltage (1min) --- 1 9 00 v rms t j operating junction temperature - 40 150 c t c operating case temperature - 40 1 50 c t s storage temper ature - 40 150 c v s1,2,3 high side floating supply offset voltage v b1,2,3 - 20 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage - 0.3 525 v v cc low side and logic supply voltage - 0.3 25 v v in input voltage of lin, hin com - 0.3 v cc +0.3 v note 1 : pulse width = 100s, single pulse h a l f - b r i d g e h v i c h a l f - b r i d g e h v i c h a l f - b r i d g e h v i c 1 c o m 2 v b 1 3 v c c 1 4 h i n 1 5 l i n 1 6 n c 7 v b 2 8 v c c 2 9 h i n 2 1 0 l i n 2 1 1 v t h 1 2 v b 3 1 3 v c c 3 1 4 h i n 3 1 5 l i n 3 1 6 n c 1 7 v + 1 8 u / v s 1 1 9 v r 1 2 0 v r 2 2 1 v / v s 2 2 2 v r 3 2 3 w / v s 3 i n t e g r a t e d i n h v i c h a l f - b r i d g e h v i c h a l f - b r i d g e h v i c h a l f - b r i d g e h v i c 1 c o m 2 v b 1 3 v c c 1 4 h i n 1 5 l i n 1 6 n c 7 v b 2 8 v c c 2 9 h i n 2 1 0 l i n 2 1 1 n c 1 2 v b 3 1 3 v c c 3 1 4 h i n 3 1 5 l i n 3 1 6 n c 1 7 v + 1 8 u / v s 1 1 9 v r 1 2 0 v r 2 2 1 v / v s 2 2 2 v r 3 2 3 w / v s 3 i n t e g r a t e d i n h v i c
irsm505 - 015 irsm515 - 015 series 3 www.irf.com ? 2014 international rectifier november 24, 2014 recommended operating conditions symbol description min max unit v + positive dc bus input voltage --- 40 0 v v s1,2,3 high s ide floating s upply offset v oltage ( note 2 ) 40 0 v v b1,2,3 high side f loating supply v olt age v s +12 v s +20 v v cc low side and l ogic s upply v oltage 1 3.5 16.5 v v in input v oltage of lin, hin, i t rip , en, flt 0 5 v f p pwm carrier frequency --- 2 0 khz note 2 : logic operational for vs from com - 8v to com+500v. logic state held for vs from com - 8v to com - v bs . static electrical characteristics ( v cc - com) = (v b - v s ) = 15 v. t c = 25 o c unless otherwise specified. the v in and i in parameters are referenced to com and are applicable to all six channels. the v cc uv parameters are referenced to com . the v bs uv p arameters are referenced to v s . symbol description min typ max units conditions bv dss drain - to - source breakdown voltage 500 --- --- v t j =25c , i lk =250 a i lkh leakage current of high side fet 1 2 a t j =25c , v ds =500v i lkl leakage current of low side f et plus gate drive ic 1 4 a t j =25c , v ds =500v r ds(on) drain to source on resistance --- 5. 0 6 .0 j =25c, v cc =15 v , id= 0.5 a --- 12.3 --- j =150 c, v cc =15 v , id =0.5 a (note 3) v sd mosfet body diode forward voltage --- 0. 8 --- v t j = 25 c, v cc = 15v , i d =0 .5 a v in,th+ positive g oing i nput t hreshold 2.2 --- --- v v in,th - negative g oing input t hreshold --- --- 0.8 v v cc uv+, v bs uv+ v cc and v bs s upply u nder - v oltage, positive going t hreshold 8 8.9 9.8 v v cc uv - , v bs uv - v cc and v bs supply u nder - v oltage, nega tive going t hreshold 6.9 7.7 8.5 v v cc uvh, v bs uvh v cc and v bs s upply u nder - v oltage l ock - o ut h ysteresis --- 1.2 --- v i qbs quiescent v bs supply current v in =0v --- 4 2 60 a i qbs, on quiescent v bs supply current v in =4v --- 4 2 60 a i qcc quiescent v cc supply current v in =0v --- 1. 7 4 ma i qcc, on quiescent v cc supply current v in =4v --- 1. 8 4 ma i in+ input bias current v in =4v --- 5.9 18 a v in = 3.3 v i in - input bias current v in =0v --- --- 2 a v in =0v r br internal bootstrap e quivalent resistor value --- 2 5 0 --- j =25c note 3 : characterized, not tested at manufacturing
irsm505 - 015 irsm515 - 015 series 4 www.irf.com ? 2014 international rectifier november 24, 2014 dynamic electrical characteristics ( v cc - com) = (v b - v s ) = 15 v. t c = 25 o c unless otherwise specified. symbol description min typ max units conditions t on input to output propagation turn - on delay time --- 0. 7 1.5 s i d =120ma, v+=30v see fig.1 t off input to output propagation turn - off delay time --- 0.9 1.5 s t fil,in input filter time (hin, lin) 200 3 0 0 --- ns v in =0 & v in = 3.3 v dt deadtime inserted --- 400 --- ns v in =0 & v in =3.3v wi thout external deadtime e on turn - on switching energy loss --- 17 --- j v + = 320v, i d = 0. 3 a, l=40mh, t c =25c (note 4) e off turn - off switching energy loss --- 3 --- j e rec recovery energy loss --- 4 --- j e on ,150 turn - on switching energy loss --- 30 -- - j v + = 320v, i d = 0. 3 a, l=40mh, t c =150c (note 4) e off ,150 turn - off switching energy loss --- 4 --- j e rec ,150 recovery energy loss --- 9 --- j note 4: characterized, not tested at manufacturing thermal and mechanical characteristics symbol des cription min typ max units conditions r th(j - c) junction to case thermal resistance --- 7. 4 --- c/w high side v - phase mosfet (note 5) note 5 : characterized, not tested at manufacturing . case temperature ( t c ) point shown in figure 2. internal ntc C symbol description min typ max units conditions r 25 resistance --- 47 --- k t c =25 c , 5% tolerance r 125 resistance --- 1.41 --- k t c =125 c b b - constant (25 - 50 c) --- 4050 --- k 2% tolerance (note 6) temp erature range - 40 --- 125 c note 6 : see application notes for usage
irsm505 - 015 irsm515 - 015 series 5 www.irf.com ? 2014 international rectifier november 24, 2014 qualification information ? qualification level industrial ?? moisture sensitivity level msl3 ??? rohs compliant yes ul certified yes C esd machine model class b human body model class 2 ? ification standards can be found at international rectifiers web site ?? ???
irsm505 - 015 irsm515 - 015 series 6 www.irf.com ? 2014 international rectifier november 24, 2014 modu le pin - out description pin name description 1 com logic ground 2 v b1 high side floating supply voltage 1 3 v cc1 15v supply 1 4 hin1 logic input for high side gate driver - phase 1 5 lin1 logic input for low side gate driver - phase 1 6 nc not connect ed 7 v b2 high side floating supply voltage 2 8 v cc 2 15v supply 2 9 hin2 logic input for high side gate driver - phase 2 10 lin2 logic input for low side gate driver - phase 2 11 v th thermistor output ( irsm505 - 015 da ) nc not connected ( irsm515 - 015 da ) 12 v b3 high side floating supply voltage 3 13 v cc 3 15v supply 3 14 hin3 logic input for high side gate driver - phase 3 15 lin3 logic input for low side gate driver - phase 3 16 nc not connected 17 v+ dc bus voltage positive 18 u/v s1 output - phase 1, high side floating supply offset 1 19 v r1 phase 1 low side source 20 v r2 phase 2 low side source 21 v/v s2 output - phase 2, high side floating supply offset 2 22 v r3 phase 3 low side source 23 w/v s3 output - phase 3, high side floating supply offs et 2 1 2 3 4 0 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 2 3 2 2 2 1 2 0 1 9 1 8 1 7 a 0 1 2 3 - 4 1 2 w i r s m 5 0 5 - 0 1 5 p a
irsm505 - 015 irsm515 - 015 series 7 www.irf.com ? 2014 international rectifier november 24, 2014 referenced figures figure 2: t c measurement point for r th (j - c) figure 1 a : input to output propagation turn - on delay time. figure 1 b : input to output propagation turn - off delay time. figure 1 c : diode reverse recovery. figure 1: switching parameter de finitions 3.8mm 14.5mm top view t c 5 0 % h i n / l i n v c e i c h i n / l i n t o f f t f 9 0 % i c 1 0 % i c 5 0 % v c e v c e i c h i n / l i n t o n t r 5 0 % h i n / l i n 9 0 % i c 1 0 % i c 5 0 % v c e v c e i f h i n / l i n t r r i r r
irsm505 - 015 irsm515 - 015 series 8 www.irf.com ? 2014 international rectifier november 24, 2014 application notes a basic application schematic is shown below. figure 3: basic sensor - less motor drive circuit connection. motor is con nected to u, v, w a complete reference design board for running any permanent magnet motor via sensorless sinusoidal control is available. the board C photo below C features the ipm? - dip module and the imotion? digital co ntrol ic . reference design kits a re available on the international rectifier website (irf.com > design resources > reference designs > intelligent power modules) figure 4 : reference design board featuring the ipm? - dip module and the imotion? irmcf171 digital control ic h v i c s v c c h i n 1 h i n 2 h i n 3 l i n 1 l i n 2 l i n 3 v t h v b 1 v b 2 v b 3 u , v s 1 v , v s 2 w , v s 3 p o w e r s u p p l y p w m w h p w m v h p w m u h p w m v l p w m w l g a t e k i l l a i n 1 i f b + i f b - i f b o v s s v d d v d d c a p x t a l 0 x t a l 1 a i n 2 s p d - r e f c o m v b u s i r m c f 1 7 1 p w m u l 4 . 8 7 k 2 m 7 . 5 0 k 1 n f 0 . 2 5 6 . 0 4 k 7 . 6 8 k + - 3 v i r s m 5 0 5 - 0 1 5 x
irsm505 - 015 irsm515 - 015 series 9 www.irf.com ? 2014 international rectifier november 24, 2014 figure s 5 - 7 show the typical cur rent capability for this module at specified conditions . in all tests, the application board C the irmcs1071 - 1 - d reference board C was placed in a box to prevent cooling from ambient airflow. figure 5 is derived from using a heat sink that maintains t c at 125c. figures 6 - 7 represent current capability for the module as used without any heat sink. ? t ja represents the difference in temperature betwee n the junction of the high - side v - phase mosfet and the ambient, measured 10cm above and 6cm away from the board. ambient temperature kept within 28 - 29 c . figure 5 : maximum sinusoidal phase current vs pwm switching frequency with a heat sink. space vect or modulation, v+=320v, t a =28c, t j =150c, t c =125c figure 6 : maximum sinusoidal phase current vs pwm switching frequency, no heat sink. space vector modulation, v+=320v, t a =28c, t j =128 c 0 100 200 300 400 500 600 700 800 6 8 10 12 14 16 18 20 rms phase current (ma) carrier frequency (khz) 3-phase modulation 2-phase modulation 0 50 100 150 200 250 300 350 400 6 8 10 12 14 16 18 20 rms phase current (ma) carrier frequency (khz) 3-phase modulation 2-phase modulation
irsm505 - 015 irsm515 - 015 series 10 www.irf.com ? 2014 international rectifier november 24, 2014 figure 7 : maximum sinusoidal phase current vs pwm switching frequency, no heat sink. space vector modulation, v+=320v, t a =28c, t j =98c the module contains an ntc C connected between com and the v th pin C which can be used to monitor the temperature of the module. the ntc is effectively a resistor whose value d ecreases as the temperature rises. the ntc resistance can be calculated at any temperature as follows: [ ( ) ] where is 7 ? and is 0 0 an external resistor network is connected to the ntc, the simplest of which is one resistor pulled up to v cc as shown in figure 3. the v th vs ntc temperature, t th curve for this configuration is shown in figure 8 below. the min, typical and max curves result from the ntc having a 5% tolerance on its resistance and 2% tolerance on the b - parameter. figure 9 shows the thermistor temperature, t th plotted against the high - side v - phase junction temperature, t j for a module without a heat sink. it is thus advisable to shut down the module when t th reaches 125c. 0 50 100 150 200 250 300 350 6 8 10 12 14 16 18 20 rms phase current (ma) carrier frequency (khz) 3-phase modulation 2-phase modulation
irsm505 - 015 irsm515 - 015 series 11 www.irf.com ? 2014 international rectifier november 24, 2014 figure 8 : v th vs t th with v th pin pulled up to v cc with a 7. 0 ? (1%, 100ppm) resistor. a 15v, 1% variation in v cc is assumed. figure 9 : t th vs t j for a module without a heat sink. v cc =15. 4 v, r=7.50k ? 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 v th (v) t th ( c) min typical max 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 t th ( c t j ( c)
irsm505 - 015 irsm515 - 015 series 12 www.irf.com ? 2014 international rectifier november 24, 2014 sop23 package outline d imensions in mm
irsm505 - 015 irsm515 - 015 series 13 www.irf.com ? 2014 international rectifier november 24, 2014 dip23a package outline dimensions in mm
irsm505 - 015 irsm515 - 015 series 14 www.irf.com ? 2014 international rectifier november 24, 2014 dip 23 package outline dimensions in mm
irsm505 - 015 irsm515 - 015 series 15 www.irf.com ? 2014 international rectifier november 24, 2014 top marking marking code p = pb free ; y = e ngineering samples date code yww format, where y = least significant digit of the production year , ww = two digits representing the week of the production year revision history nov 201 4 correct ed logic in figure 1. added ul c ertification note data and specifications are subject to chang e without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252 - 7105 tac fax: (310) 252 - 7903 visit us at www.irf.com for sales contact information a 0 1 2 3 - 4 1 2 p i r s m 5 0 5 - 0 1 5 p a

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