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Datasheet File OCR Text: |
sfh 415 gaas-ir-lumineszenzdioden gaas infrared emitters lead (pb) free product - rohs compliant 2009-08-21 1 wesentliche merkmale ? gaas-led mit sehr hohem wirkungsgrad hohe zuverl?ssigkeit ul version erh?ltlich gute spektrale anpassung an si-fotoempf?nger sfh 415: geh?usegleich mit sfh 300, sfh 203 anwendungen ir-fernsteuerung von fernseh- und rundfunkger?ten, videorecordern, lichtdimmern ger?tefernsteuerungen fr gleich- und wechsellichtbetrieb rauchmelder sensorik diskrete lichtschranken typ type bestellnummer ordering code strahlst?rkegruppierung 1) ( i f = 100 ma, t p = 20 ms) radiant intensity grouping 1) i e (mw/sr) sfh 415 q62702-p0296 > 25 sfh 415-u q62702-p1137 > 40 1) gemessen bei einem raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr features very highly efficient gaas-led high reliability ul version available spectral match with silicon photodetectors sfh 415: same package as sfh 300, sfh 203 applications ir remote control of hi-fi and tv-sets, video tape recorders, dimmers remote control for steady and varying intensity smoke detectors sensor technology discrete interrupters
2009-08-21 2 sfh 415 grenzwerte ( t a = 25 c) maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 + 100 c sperrspannung reverse voltage v r 5v durchlassstrom forward current i f 100 ma sto?strom, t p 10 s, d = 0 surge current i fsm 3a verlustleistung power dissipation p tot 165 mw w?rmewiderstand thermal resistance r thja 450 k/w kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength at peak emission i f = 100 ma, t p = 20 ms peak 950 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 100 ma 55 nm abstrahlwinkel half angle sfh 415 17 grad aktive chipfl?che active chip area a 0.09 mm 2 abmessungen der aktiven chipfl?che dimensions of the active chip area l b l w 0.3 0.3 mm 2 abstand chipoberfl?che bis linsenscheitel distance chip front to lens top h 4.2 4.8 mm sfh 415 2009-08-21 3 schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, bei i f = 100 ma, r l = 50 switching times, e from 10% to 90% and from 90% to 10%, i f = 100 ma, r l = 50 t r , t f 0.5 s kapazit?t capacitance v r = 0 v, f = 1 mhz c o 25 pf durchlassspannung forward voltage i f = 100 ma, t p = 20 ms i f = 1 a, t p = 100 s v f v f 1.3 ( 1.5) 2.3 ( 2.8) v v sperrstrom reverse current v r = 5 v i r 0.01 ( 1) a gesamtstrahlungsfluss total radiant flux i f = 100 ma, t p = 20 ms e 22 mw temperaturkoeffizient von i e bzw. e , i f = 100 ma temperature coefficient of i e or e , i f = 100 ma tc i ? 0.5 %/k temperaturkoeffizient von v f , i f = 100 ma temperature coefficient of v f , i f = 100 ma tc v ? 2 mv/k temperaturkoeffizient von , i f = 100 ma temperature coefficient of , i f = 100 ma tc + 0.3 nm/k kennwerte ( t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit 2009-08-21 4 sfh 415 gruppierung der strahlst?rke i e in achsrichtung gemessen bei einem raumwinkel = 0.01 sr grouping of radiant intensity i e in axial direction at a solid angle of = 0.01 sr bezeichnung parameter symbol wert value einheit unit sfh 415 sfh 415-t 1) sfh 415-u strahlst?rke radiant intensity i f = 100 ma, t p = 20 ms i e min i e max 25 ? 25 50 40 ? mw/sr mw/sr strahlst?rke radiant intensity i f = 1 a, t p = 100 s i e typ . ? 350 450 mw/sr 1) sfh 415-t kann nicht einzeln bestellt werden. / sfh 415-t can not be ordered separately. sfh 415 2009-08-21 5 relative spectral emission i rel = f ( ) forward current i f = f ( v f ), single pulse, t p = 20 s permissible pulse handling capability i f = f ( ), t a = 25 c duty cycle d = parameter ohrd1938 rel 0 880 920 960 1000 nm 1060 20 40 60 80 % 100 10 ohr01554 f v -3 -2 10 -1 10 0 10 1 10 0123456v8 a f t ohr00860 p -5 10 10 2 f 10 3 10 4 5 dc 0.2 0.5 0.1 0.005 0.01 0.02 0.05 t p t f t p t d = 5 ma -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 s d = radiant intensity single pulse, t p = 20 s radiation characteristics, rel = f ( ) e e 100 ma = f ( i f ) ohr01551 10 -3 f -2 10 10 -1 10 0 10 1 10 2 e 100 ma e -2 10 -1 10 0 10 1 10 a a ohr01552 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ? 0.2 0.4 0.6 0.8 1.0 100 0 0 max. permissible forward current i f = f ( t a ) ohr00883 0 f 0 20 40 60 80 100 120 20 40 60 80 100 120 ma ?c t a r thja = 450 k/w 2009-08-21 6 sfh 415 ma?zeichnung package outlines ma?e in mm (inch) / di mensions in mm (inch). empfohlenes l?tpaddesign wellenl?ten (ttw) recommended solder pad ttw soldering ma?e in mm (inch) / di mensions in mm (inch). 7.8 (0.307) 7.5 (0.295) 9.0 (0.354) 8.2 (0.323) 29 (1.142) 27 (1.063) 1.8 (0.071) 1.2 (0.047) 4.8 (0.189) 4.2 (0.165) ?5.1 (0.201) ?4.8 (0.189) 0.8 (0.031) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) 2.54 (0.100) spacing 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) area not flat chip position cathode geoy6645 4 (0.157) ohlpy985 4.8 (0.189) sfh 415 2009-08-21 7 l?tbedingungen soldering conditions wellenl?ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) published by osram opto semiconductors gmbh leibnizstrasse 4, d-93055 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design re served. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sor ted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves |
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