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| m ar king a4 sot-23 plastic-encapsulate diodes BAV70LT1 switching diode features power dissipation p d: 225 mw(tamb=25 ) forward current i f: 200 ma reverse voltage v r : 70 v operating and storage junction temperature range t j , t stg : -55 to +15 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 70 v reverse voltage leakage current i r v r =70v 2.5 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv diode capacitance c d v r =0v,f=1mhz 1.5 pf reverse recovery time t r r i f =i r =10ma i r =1ma ,v r =5v r c =100 ? 6 ns ba v70lt1 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd rohs 3 1 2 s o t - 2 3 1 . b a s e 2 . e m i t t e r 3 . c o l l e c t o r 1 . 1 . 3 2 . 4 2 . 9 1 . 9 0 . 9 5 0 . 9 5 0 . 4 u n i t : m m wej electronic co.,ltd
typical characteristics ba v70lt1 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd r o hs wej electronic co.,ltd |
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