mpq7053 silicon npn/pnp complementary quad transistor description: the central semiconductor mpq7053 type is comprised of two independent silicon npn transistors and two independent silicon pnp transistors mounted in a 14-pin dip, designed for general purpose amplifier and switching applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 250 v collector-emitter voltage v ceo 250 v emitter-base voltage v ebo 5.0 v continuous collector current i c 500 ma power dissipation (per transistor) p d 750 mw power dissipation (total package) p d 1.7 w operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics per transistor: (t a =25c) symbol test conditions min max units i cbo v cb =180v 250 na i ebo v eb =3.0v 100 na bv cbo i c =100a 250 v bv ceo i c =1.0ma 250 v bv ebo i e =100a 5.0 v v ce(sat) i c =20ma, i b =2.0ma 0.70 v v be(sat) i c =20ma, i b =2.0ma 0.90 v h fe v ce =10v, i c =1.0ma 25 h fe v ce =10v, i c =10ma 35 h fe v ce =10v, i c =30ma 25 f t v ce =20v, i c =10ma, f=100mhz 50 mhz c ob v cb =20v, i e =0, f=1.0mhz 6.0 pf c ib v eb =3.0v, i c =0, f=1.0mhz (npn) 50 pf c ib v eb =3.0v, i c =0, f=1.0mhz (pnp) 75 pf to-116 case r0 (10-march 2014) www.centralsemi.com
mpq7053 silicon npn/pnp complementary quad transistor to-116 case - mechanical outline lead code: 1) collector q1 8) collector q3 2) base q1 9) base q3 3) emitter q1 10) emitter q3 4) no connection 11) no connection 5) emitter q2 12) emitter q4 6) base q2 13) base q4 7) collector q2 14) collector q4 marking: full part number pin configuration www.centralsemi.com r0 (10-march 2014)
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