SQM110P04-04L www.vishay.com vishay siliconix s11-2035-rev. c, 17-oct-11 1 document number: 65268 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 40 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 40 r ds(on) ( ? ) at v gs = - 10 v 0.0040 r ds(on) ( ? ) at v gs = - 4.5 v 0.0060 i d (a) - 120 configuration single s g d p-channel mosfet to-263 s d g top view ordering information package to-263 lead (pb)-free and halo gen-free SQM110P04-04L-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d - 120 a t c = 125 c - 120 continuous source curr ent (diode conduction) a i s - 120 pulsed drain current b i dm - 330 single pulse avalanche current l = 0.1 mh i as - 80 single pulse avalanche energy e as 320 mj maximum power dissipation b t c = 25 c p d 375 w t c = 125 c 125 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.40
SQM110P04-04L www.vishay.com vishay siliconix s11-2035-rev. c, 17-oct-11 2 document number: 65268 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 40 v - - - 1.0 a v gs = 0 v v ds = - 40 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 40 v, t j = 175 c - - - 250 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 120 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 30 a - 0.0034 0.0040 ? v gs = - 10 v i d = - 30 a, t j = 125 c - - 0.0059 v gs = - 10 v i d = - 30 a, t j = 175 c - - 0.0070 v gs = - 4.5 v i d = - 20 a - 0.0050 0.0060 forward transconductance b g fs v ds = - 15 v, i d = - 30 a - 97 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 20 v, f = 1 mhz - 11 183 13 980 pf output capacitance c oss - 1614 2020 reverse transfer capacitance c rss - 1294 1620 total gate charge c q g v gs = - 10 v v ds = - 20 v, i d = - 110 a - 220 330 nc gate-source charge c q gs -34- gate-drain charge c q gd -56- gate resistance r g f = 1 mhz 1.2 2.5 3.7 ? turn-on delay time c t d(on) v dd = - 20 v, r l = 0.18 ? i d ? - 110 a, v gen = - 10 v, r g = 1 ? -1726 ns rise time c t r -1523 turn-off delay time c t d(off) - 112 168 fall time c t f -4568 source-drain diode ratings and characteristics b pulsed current a i sm - - - 330 a forward voltage v sd i f = - 100 a, v gs = 0 - - 0.95 - 1.5 v
SQM110P04-04L www.vishay.com vishay siliconix s11-2035-rev. c, 17-oct-11 3 document number: 65268 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 40 80 120 160 200 240 03691215 v gs =10vthru5v v gs =3v v gs =4v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 40 80 120 160 200 0 1632486480 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = 25 c t c = - 55 c 0 2500 5000 7500 10 000 12 500 15 000 0 5 10 15 20 25 30 35 40 c i ss c r ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 30 60 90 120 150 012345 t c = 125 c t c = 25 c t c = - 55 c v gs - g ate-to- s ource voltage (v) i d - drain current (a) 0 0.003 0.006 0.009 0.012 0.015 0 20406080100 v gs =10v v gs =4.5v r d s (on) - on-re s i s tance ( ) i d - drain current (a) 0 2 4 6 8 10 0 25 50 75 100 125 150 175 200 225 i d = 110 a v d s =20v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v)
SQM110P04-04L www.vishay.com vishay siliconix s11-2035-rev. c, 17-oct-11 4 document number: 65268 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs . junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =30a v gs =10v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0 0.01 0.02 0.03 0.04 0.05 0246810 r d s (on) - on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) t j = 25 c t j = 150 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 v s d - s ource-to-drain voltage (v) i s - s ource current (a) t j = 25 c t j = 150 c - 0.6 - 0.3 0 0.3 0.6 0.9 1.2 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) - 50 - 25 0 25 50 75 100 125 150 175 v ds - drain-to-source voltage (v) t j - junction temperature (c) i d =10ma - 54 - 52 - 50 - 48 - 46 - 44 - 42
SQM110P04-04L www.vishay.com vishay siliconix s11-2035-rev. c, 17-oct-11 5 document number: 65268 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified - drain current (a) i d t c = 25 c single pulse 1 ms 100 ms, 1 s, 10 s, dc 100 s r ds(on) * limited by 10 ms 0.01 0.1 1 10 100 bvdss limited i dm limited i d limited 0.01 0.1 1 10 100 1000 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
SQM110P04-04L www.vishay.com vishay siliconix s11-2035-rev. c, 17-oct-11 6 document number: 65268 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65268 . sq u are wave p u lse d u ration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5
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