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jmnic product specification silicon pnp power transistors 2SA969 description ? with to-66 package ? complement to type 2sc2239 ? high breakdown votage applications ? power amplifier applications ? driver stage amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -1.5 a i e emitter current 1.5 a p t total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-66) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA969 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -160 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-500ma; i b =-50ma -1.5 v v be base-emitter on voltage i c =-500ma ; v ce =-5v -1.0 v i cbo collector cut-off current v cb =-160v ;i e =0 -1.0 | a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 | a h fe dc current gain i c =-100ma ; v ce =-5v 70 240 c ob output ca pacitance i e =0 ; v cb =-10v,f=1mhz 30 pf f t transition frequency i c =-100ma ; v ce =10v 100 mhz ? h fe classifications o y 70-140 120-240
jmnic product specification 3 silicon pnp power transistors 2SA969 package outline fig.2 outline dimensions

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